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MR25H10CDC

Everspin Technologies

MR25H10CDC by Everspin Technologies

MR25H10CDC by Everspin Technologies is a 128KX8 MEMORY CIRCUIT with 1048576 bit Memory Density. Operating at 3V, it features SYNCHRONOUS mode and INDUSTRIAL temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

$12.020

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,517 parts In-Stock

1+ parts

$12.020

100+ parts

$10.303

1k+ parts

$9.669

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3,517

$12.020

$10.303

$9.669

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Chip1Stop

Japan . 1,140 parts In-Stock

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$7.028

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$7.028

Verical

USA . 25 parts In-Stock

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$15.032

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25

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$15.032

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Distributors (In-Stock)

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Nova Conductors

Japan . 82 parts In-Stock

1+ parts

$7.152

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82

$7.152

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Vyrian

USA . 891 parts In-Stock

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891

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Chip Stock

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ComSIT Distribution GmbH

Germany . 550 parts In-Stock

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550

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Distributors (Availability)

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Continental Prestige Electronics

USA . 5,871 parts In-Stock

1+ parts

$7.152

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$7.009

5,871

$7.152

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$7.009

Netroflash

USA . 100 parts In-Stock

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$7.152

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$7.009

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100

$7.152

$7.009

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Microchip USA

USA . 432 parts In-Stock

1+ parts

$27.410

100+ parts

$27.020

1k+ parts

$26.820

10k+ parts

$26.630

432

$27.410

$27.020

$26.820

$26.630

Kepictronics

USA . 6,730 parts In-Stock

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Argo Parts USA

USA . 3,717 parts In-Stock

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Perfect Parts

USA . 3,233 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Overview

Unlock the power of seamless data storage and retrieval with the MR25H10CDC by Everspin Technologies. As a leading manufacturer in the industry, Everspin Technologies guarantees top-notch quality and reliability. This memory IC is perfect for a wide range of applications, offering unparalleled value and benefits to customers. Experience fast and efficient operation in a compact package, making it ideal for industrial environments. Trust Everspin Technologies to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the memory IC, making it suitable for various applications.

Operating Mode: SYNCHRONOUS

The synchronous operation allows for precise timing and synchronization of data transfer, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of systems and devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this memory IC can withstand harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the memory IC efficient and reliable.

Technical Specifications

Other Function Memory ICs MR25H10CDC attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Standby Current:

.000115 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

27 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5 mm

Trade Compliance

MR25H10CDC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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