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MR25H10CDF

Everspin Technologies

MR25H10CDF by Everspin Technologies

MR25H10CDF by Everspin Technologies is a synchronous memory IC with a capacity of 128Kx8 and a memory density of 1,048,576 bits. It operates at a nominal voltage of 3V and has a max operating temperature of 85°C. This memory circuit is commonly used in industrial applications requiring reliable and high-performance data storage.

Median Price

$11.570

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Arrow

USA . 824 parts In-Stock

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$11.534

100+ parts

$9.961

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$9.426

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824

$11.534

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Mouser Electronics

USA . 4,094 parts In-Stock

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$11.570

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$9.960

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$9.390

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$11.570

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DigiKey

USA . 2,100 parts In-Stock

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$11.800

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$10.114

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$9.491

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$11.800

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Verical

USA . 824 parts In-Stock

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$14.629

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Future Electronics

Canada . 570 parts In-Stock

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$7.020

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EBV Elektronik

Germany . 570 parts In-Stock

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Avnet

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Nova Conductors

Japan . 53 parts In-Stock

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$7.732

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Bristol Electronics

USA . 18 parts In-Stock

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$9.750

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$6.581

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Chip Stock

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Vyrian

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NAC Semi

USA . 1,140 parts In-Stock

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$14.540

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$13.220

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IBS Electronics

USA . 570 parts In-Stock

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$9.172

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$9.116

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$8.261

570

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Sensible Micro Corp

USA . 110 parts In-Stock

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North Shore Components

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ComSIT Distribution GmbH

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$2.082

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$1.978

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$1.978

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$2.082

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$1.978

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Aztec Data Supply Inc.

USA . 65 parts In-Stock

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$3.780

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Continental Prestige Electronics

USA . 6,923 parts In-Stock

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$7.732

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$7.578

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Netroflash

USA . 2,000 parts In-Stock

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$7.732

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$7.346

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$7.191

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RC Electronics

USA . 6,281 parts In-Stock

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S.R.D Solutions

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Perfect Parts

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Kepictronics

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Argo Parts USA

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iodParts Technologies Inc.

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Overview

Discover the power of the MR25H10CDF by Everspin Technologies, a leading manufacturer in the industry. This incredible memory circuit offers unparalleled quality and reliability, making it perfect for various applications. With its innovative technology and compact design, this product provides customers with unmatched value and benefits. Experience faster and more efficient performance, seamless integration, and extended battery life. Whether you're a professional or an enthusiast, the MR25H10CDF is the ultimate choice for all your memory needs. Elevate your experience with Everspin Technologies and unlock endless possibilities today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides excellent durability and protection for the memory IC, making it a reliable choice even in harsh environments.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation of the memory IC onto a circuit board, saving time and effort in assembly.

No. of Functions: 1

With a single function, this memory IC is designed to efficiently perform its intended task without any unnecessary complexities, ensuring optimal performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on the circuit board, making it suitable for compact designs.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise and synchronized data transfer, making it ideal for applications that require accurate data handling.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V, this memory IC offers consistent and stable performance, enhancing its reliability.

Power Supplies (V): 3/3.3

With support for power supplies of both 3V and 3.3V, this memory IC provides flexibility and compatibility with various systems and devices.

No. of Terminals: 8

The 8 terminals offer sufficient connectivity options, facilitating easy integration into different circuit designs.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile package style ensures efficient heat dissipation and enables space-saving installation in tight spaces.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this memory IC can withstand high-temperature environments, making it suitable for industrial applications.

Organization: 128KX8

The organization of 128KX8 (128 kilobits x 8) allows for the storage and retrieval of a large amount of data efficiently, making it suitable for data-intensive applications.

Minimum Operating Temperature: -40 °C

This memory IC can operate reliably even in extremely low-temperature conditions, enabling its usage in various environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent corrosion resistance and solderability, ensuring long-term reliability and ease of assembly.

Terminal Position: DUAL

The dual terminal position allows for easy and flexible connection options, enhancing the adaptability of this memory IC in different circuit layouts.

Maximum Seated Height: 0.9 mm

With a maximum seated height of 0.9mm, this memory IC is suitable for applications with strict height requirements, contributing to space optimization.

Width: 5 mm

The compact width of 5mm ensures easy integration of this memory IC into various board designs, enabling efficient space utilization.

Minimum Supply Voltage (Vsup): 2.7 V

Operating at a minimum supply voltage of 2.7V, this memory IC offers a wide voltage range, allowing compatibility with different power sources.

Maximum Time At Peak Reflow Temperature (s): 30

The memory IC can withstand the peak reflow temperature for up to 30 seconds, ensuring proper soldering during the manufacturing process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this memory IC can be subjected to high-temperature soldering processes without any detrimental effects.

Length: 6 mm

The compact length of 6mm enables easy placement and integration of this memory IC, making it suitable for space-constrained designs.

Temperature Grade: INDUSTRIAL

The memory IC's industrial temperature grade ensures reliable operation in a wide range of temperatures, making it suitable for industrial applications.

Technology: CMOS

Utilizing CMOS technology, this memory IC offers low power consumption, high-speed performance, and improved noise immunity, making it an efficient and reliable choice.

Terminal Form: NO LEAD

The no-lead terminal form eliminates the risk of lead-related environmental concerns and ensures compatibility with lead-free soldering processes.

Maximum Supply Current: 27 mA

With a maximum supply current of 27mA, this memory IC operates within a reasonable power range, providing energy-efficient performance.

No. of Words: 131072 words

The large number of words (131,072) that can be stored or accessed in this memory IC ensures the availability of a substantial amount of data.

Memory Width: 8

The memory width of 8 bits allows for the simultaneous processing of 8-bit data, improving efficiency and enabling faster data transfer rates.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27mm ensures compatibility with standard surface mount technologies and facilitates easy PCB routing and soldering.

No. of Words Code: 128K

With a code that supports 128K words, this memory IC provides a versatile storage capacity, accommodating a wide range of data requirements.

Moisture Sensitivity Level (MSL): 3

Rated at MSL 3, this memory IC can withstand moderate moisture exposure, ensuring reliability during storage and assembly processes.

Maximum Supply Voltage (Vsup): 3.6 V

The memory IC's maximum supply voltage of 3.6V allows for operation in systems with higher voltage requirements, offering flexibility in design.

Memory Density: 1048576 bit

With a memory density of 1,048,576 bits, this memory IC provides a substantial amount of data storage, suitable for applications with demanding memory requirements.

Memory IC Type: MEMORY CIRCUIT

As a specialized memory circuit, this memory IC is designed to provide efficient and reliable data storage capabilities, making it a suitable choice for memory-intensive applications.

Maximum Standby Current: 0.000115 Amp

With a low maximum standby current of 0.000115 Amp, this memory IC ensures minimal power consumption during idle or standby periods, enhancing energy efficiency.

Technical Specifications

Other Function Memory ICs MR25H10CDF attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

6 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Maximum Standby Current:

.000115 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

27 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

MR25H10CDF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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