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MR2A16ACMA35

Everspin Technologies

MR2A16ACMA35 by Everspin Technologies

MR2A16ACMA35 by Everspin: 256KX16 memory IC with 35ns access time, operates at 3.3V. Suitable for industrial applications, features low profile grid array package and CMOS technology.

Median Price

$21.130

Lifecycle Status

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9

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1k+

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DigiKey

USA . 2,540 parts In-Stock

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$38.290

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$32.598

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Arrow

USA . 258 parts In-Stock

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$20.800

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Verical

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Nova Conductors

Japan . 56 parts In-Stock

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$26.040

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Vyrian

USA . 3,180 parts In-Stock

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Chip Stock

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Sensible Micro Corp

USA . 1,352 parts In-Stock

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NAC Semi

USA . 348 parts In-Stock

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Amalfi Trading

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Aztec Data Supply Inc.

USA . 1,895 parts In-Stock

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$2.120

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Continental Prestige Electronics

USA . 1,040 parts In-Stock

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$26.040

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$25.519

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$26.040

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Netroflash

USA . 500 parts In-Stock

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Microchip USA

USA . 5,034 parts In-Stock

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$73.070

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$71.800

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$71.160

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$70.530

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$70.530

Perfect Parts

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Argo Parts USA

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Overview

Everspin Technologies presents the MR2A16ACMA35, a high-quality Memory Circuit IC designed for various applications in industrial settings. With a low profile package style and fine pitch grid array, this product offers reliability and efficiency. The 256KX16 organization and fast access time of 35 ns ensure optimal performance, while the 3.3V nominal supply voltage contributes to energy savings. Trust Everspin Technologies for cutting-edge technology that meets your memory needs with precision and value. Choose the MR2A16ACMA35 for superior results in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the memory IC, ensuring a longer lifespan.

Operating Mode: ASYNCHRONOUS

Allows for independent read and write operations, enhancing flexibility and efficiency.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage for reliable performance and energy efficiency.

Organization: 256KX16

Offers a high memory capacity of 256K words with a data width of 16 bits, suitable for a variety of applications.

Temperature Grade: INDUSTRIAL

Designed to withstand industrial operating conditions, ensuring reliability in harsh environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed operation.

Moisture Sensitivity Level (MSL): 3

Built to withstand moderate levels of moisture, increasing product reliability during storage and handling.

Maximum Standby Current: 0.028 Amp

Low standby current consumption helps conserve energy and extends battery life in portable devices.

Maximum Access Time: 35 ns

Provides fast access times for efficient data retrieval and processing.

Technical Specifications

Other Function Memory ICs MR2A16ACMA35 attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

S-PBGA-B48

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.028 Amp

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Width:

8 mm

Trade Compliance

MR2A16ACMA35 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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