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MR2A16AMYS35R

Everspin Technologies

MR2A16AMYS35R by Everspin Technologies

MR2A16AMYS35R by Everspin Technologies is a 256Kx16 memory IC with CMOS technology. Operating at 3.3V, it has a temperature range of -40 to 125°C and is AEC-Q100 compliant for automotive applications. This small outline, thin profile package with 44 terminals is ideal for high-performance asynchronous memory needs in automotive electronics.

Median Price

$41.031

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 1,500 parts In-Stock

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Vyrian

USA . 8,402 parts In-Stock

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Nova Conductors

Japan . 25 parts In-Stock

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AZTECH Wire

Italy . 1,067 parts In-Stock

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Continental Prestige Electronics

USA . 4,688 parts In-Stock

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Argo Parts USA

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Aranea Global

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Overview

Everspin Technologies proudly presents the MR2A16AMYS35R, a cutting-edge memory IC designed to bring superior performance and reliability to a variety of applications. With a focus on quality and innovation, Everspin Technologies ensures that each product meets the highest industry standards. The MR2A16AMYS35R offers customers unmatched value with its advanced features and benefits, making it the ideal choice for automotive and other function memory needs. Experience the difference with Everspin Technologies and unlock the full potential of your projects with the MR2A16AMYS35R.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product reliable for long-term use.

Surface Mount: YES

Ease of installation and potentially saving space on the circuit board.

Screening Level: AEC-Q100

Ensures high-reliability automotive-grade performance.

Operating Mode: ASYNCHRONOUS

Allows for independent access to each memory location, enhancing efficiency in data retrieval.

Nominal Supply Voltage (Vsup): 3.3V

Optimal voltage for stable performance without risking damage to the product.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Space-saving design for compact electronic devices.

Maximum Operating Temperature: 125 °C

Suitable for automotive applications where temperature variations are common.

Memory Density: 4194304 bit

High memory density allowing for efficient storage of data.

Technical Specifications

Other Function Memory ICs MR2A16AMYS35R attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10.16 mm

Trade Compliance

MR2A16AMYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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