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M36W108T100ZN5T

STMicroelectronics

M36W108T100ZN5T by STMicroelectronics

M36W108T100ZN5T by STMicroelectronics is a 1MX8 memory IC with 1048576 words and 8388608 bit memory density. Operating in asynchronous mode, it has a supply voltage range of 2.7V to 3.6V and temperature range of -20 °C to 85°C. This rectangular GRID ARRAY package is suitable for various applications requiring high-density memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,180 parts In-Stock

1+ parts

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2,180

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Anansix

USA . 1,084 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,084

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Vyrian

USA . 711 parts In-Stock

1+ parts

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711

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 368 parts In-Stock

1+ parts

$4.140

100+ parts

-

1k+ parts

$3.726

10k+ parts

-

368

$4.140

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$3.726

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MKK Technologies

India . 1,607 parts In-Stock

1+ parts

$7.785

100+ parts

-

1k+ parts

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10k+ parts

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1,607

$7.785

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DigiPath Technology Company

USA . 1,607 parts In-Stock

1+ parts

$7.785

100+ parts

-

1k+ parts

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10k+ parts

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1,607

$7.785

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Corphita

USA . 732 parts In-Stock

1+ parts

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732

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Parana Technologies

USA . 637 parts In-Stock

1+ parts

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100+ parts

$4.950

1k+ parts

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637

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$4.950

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Overview

Experience unparalleled reliability and performance with the M36W108T100ZN5T by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality memory ICs that are perfect for a wide range of applications. From consumer electronics to industrial machinery, this product offers exceptional value, benefits, and advantages to customers looking for a solution that combines cutting-edge technology with unmatched durability. Trust STMicroelectronics to provide you with the best memory ICs on the market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the memory IC, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and secure installation on PCBs.

Package Shape: RECTANGULAR

Fits well in standard PCB layouts, optimizing space usage.

Operating Mode: ASYNCHRONOUS

Enables flexible data processing without the need for a clock signal.

No. of Terminals: 48

Offers ample connectivity for interfacing with other components.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

Facilitates high-density mounting and space-saving.

Maximum Operating Temperature: 85 °C

Ensures reliable performance even under high-temperature conditions.

Organization: 1MX8

Provides a large memory capacity with a data width of 8 bits per word.

Minimum Operating Temperature: -20 °C

Allows for operation in a wide range of temperature environments.

Terminal Position: BOTTOM

Facilitates easy and secure connections with other components on the PCB.

Maximum Seated Height: 1 mm

Enables low-profile designs for space-constrained applications.

Width: 9.8 mm

Compact size for efficient use of PCB real estate.

Minimum Supply Voltage (Vsup): 2.7 V

Supports low-power operation and extends battery life.

Length: 11.8 mm

Optimal size for fitting into various electronic devices.

Technology: CMOS

Provides low power consumption and high noise immunity for efficient operation.

Terminal Form: BUTT

Allows for secure and reliable terminal connections.

No. of Words: 1048576 words

Offers a large memory capacity for data storage and processing.

Memory Width: 8

Enables efficient data transfer and processing with 8 bits per word.

Terminal Pitch: 1 mm

Facilitates precise and compact PCB layout design.

No. of Words Code: 1M

Indicates a high memory capacity of 1 megaword.

Maximum Supply Voltage (Vsup): 3.6 V

Supports high-performance operation while ensuring device safety.

Memory Density: 8388608 bit

Provides a high-density memory storage solution for data-intensive applications.

Memory IC Type: MEMORY CIRCUIT

Specifically designed for memory storage and retrieval functions.

Technical Specifications

Other Function Memory ICs M36W108T100ZN5T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T100ZN5T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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