Loading...

M36W0R6040B0ZAQT

STMicroelectronics

M36W0R6040B0ZAQT by STMicroelectronics

M36W0R6040B0ZAQT by STMicroelectronics is a mixed memory IC featuring 4M x 16 organization, operating at a nominal voltage of 1.8V. It supports asynchronous mode with a max access time of 70 ns and operates b/w -30 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,354 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,354

-

-

-

-

Vyrian

USA . 1,942 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,942

-

-

-

-

Anansix

USA . 1,648 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,648

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,344 parts In-Stock

1+ parts

$2.698

100+ parts

-

1k+ parts

$2.429

10k+ parts

-

1,344

$2.698

-

$2.429

-

MKK Technologies

India . 835 parts In-Stock

1+ parts

$5.074

100+ parts

-

1k+ parts

-

10k+ parts

-

835

$5.074

-

-

-

DigiPath Technology Company

USA . 835 parts In-Stock

1+ parts

$5.074

100+ parts

-

1k+ parts

-

10k+ parts

-

835

$5.074

-

-

-

Parana Technologies

USA . 2,273 parts In-Stock

1+ parts

-

100+ parts

$3.226

1k+ parts

-

10k+ parts

-

2,273

-

$3.226

-

-

Corphita

USA . 1,440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,440

-

-

-

-

Overview

Unlock a new era of innovation with the M36W0R6040B0ZAQT from STMicroelectronics, where cutting-edge memory technology meets exceptional reliability. This versatile FLASH+PSRAM solution enhances your designs with low power consumption and superior performance, making it ideal for a wide range of applications—from consumer electronics to industrial automation. Trust in STMicroelectronics' commitment to excellence for a product that delivers unparalleled value and efficiency. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making this IC a reliable choice for various applications.

Surface Mount: YES

Surface mount capability allows for easy integration into modern compact circuit designs, enhancing the product's versatility.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage on PCBs, allowing for more efficient layout and design flexibility.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster data access and improves system performance, making it ideal for high-speed applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM increases versatility, enabling complex data storage and processing in a single IC, catering to diverse application needs.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V minimizes power consumption, making this IC suitable for battery-operated devices and energy-efficient systems.

Power Supplies (V): 1.8

Operating with a power supply of 1.8V ensures compatibility with a wide range of low voltage electronics, appealing to modern device requirements.

No. of Terminals: 88

With 88 terminals, this IC enables complex connectivity options while ensuring robust performance in various applications.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch grid array style facilitate high-density mounting and improved thermal performance, ideal for compact devices.

Maximum Operating Temperature: 85 °C

The max operating temperature of 85 °C allows reliable performance in a variety of environments, making it suitable for industrial applications.

Organization: 4MX16

The 4M x 16 organization supports extensive memory options, allowing for efficient data storage solutions tailored to specific needs.

Minimum Operating Temperature: -30 °C

A low minimum operating temperature of -30 °C ensures functionality in harsh environments, making it ideal for automotive or outdoor applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides excellent solderability and reliability, enhancing the product's long-term performance in electronic circuits.

Terminal Position: BOTTOM

Bottom terminal positioning promotes efficient space utilization on the PCB, contributing to space-saving device designs.

Maximum Seated Height: 1.2 mm

With a maximum seated height of just 1.2mm, this IC features a low profile, facilitating slim product designs.

Width: 8 mm

An 8 mm width allows easy integration into compact PCBs while maintaining robust performance characteristics.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum supply voltage of 1.7V ensures compatibility with a variety of power sources, enhancing design flexibility.

Length: 10 mm

At 10 mm in length, this component fits well in tight spaces, making it a practical choice for space-constrained applications.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operations, which is essential for today's high-performance digital systems.

Terminal Form: BALL

Ball terminal design improves soldering reliability and electrical performance, contributing to a resilient overall product.

Maximum Supply Current: 45 mA

A maximum supply current of 45 mA allows for substantial processing capability while maintaining energy efficiency, suitable for demanding applications.

No. of Words: 4194304 words

With over 4 million words of memory, this IC caters to applications requiring significant data storage capabilities.

Memory Width: 16

A memory width of 16 bits supports efficient data handling for modern embedded systems, enhancing overall system performance.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch supports advanced manufacturing processes while enabling compact designs without sacrificing connectivity.

No. of Words Code: 4M

The 4M words coding ensures ample memory space for applications that require high-volume data storage and processing.

Maximum Supply Voltage (Vsup): 1.95 V

With a maximum supply voltage of 1.95V, this IC can operate in slightly varied power environments, increasing its usability.

Memory Density: 67108864 bit

A memory density of 64MB enables storage of large amounts of data, making this IC suitable for sophisticated data applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, it specializes in efficient data management, making it a prime choice for applications that rely heavily on memory.

Maximum Standby Current: 0.00011 Amp

A low maximum standby current helps conserve power during periods of inactivity, making it ideal for power-sensitive applications.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, this IC ensures swift data retrieval, enhancing overall system responsiveness.

Technical Specifications

Other Function Memory ICs M36W0R6040B0ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R6040B0ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20