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TMS44C251-12DJ

Texas Instruments

TMS44C251-12DJ by Texas Instruments

TMS44C251-12DJ by Texas Instruments is a 256KX4 MEMORY CIRCUIT IC with 1048576 bit Memory Density, 120 ns Max Access Time. It operates at 5V, has DUAL terminals in a SMALL OUTLINE package, suitable for commercial applications requiring fast memory access.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,438 parts In-Stock

1+ parts

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2,438

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Digiode

USA . 2,320 parts In-Stock

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2,320

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 703 parts In-Stock

1+ parts

$4.479

100+ parts

-

1k+ parts

$4.914

10k+ parts

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703

$4.479

-

$4.914

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DigiPath Technology Company

USA . 290 parts In-Stock

1+ parts

$4.932

100+ parts

$4.538

1k+ parts

-

10k+ parts

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290

$4.932

$4.538

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ChromeModa Solutions

Germany . 1,675 parts In-Stock

1+ parts

$5.033

100+ parts

$4.127

1k+ parts

-

10k+ parts

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1,675

$5.033

$4.127

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IDEA Electronic Components Group

UK . 1,579 parts In-Stock

1+ parts

$5.033

100+ parts

-

1k+ parts

$4.530

10k+ parts

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1,579

$5.033

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$4.530

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AZTECH Wire

Italy . 659 parts In-Stock

1+ parts

$7.712

100+ parts

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659

$7.712

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One Stop Electronics

USA . 1,269 parts In-Stock

1+ parts

$26.000

100+ parts

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1,269

$26.000

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Corphita

USA . 2,217 parts In-Stock

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2,217

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the TMS44C251-12DJ. This innovative memory circuit offers customers a versatile solution for a wide range of applications. With a compact small outline package and temperature grade suitable for commercial use, this product provides exceptional value and performance. Trust Texas Instruments to deliver cutting-edge technology that meets your memory IC needs with efficiency and precision. Elevate your projects with the TMS44C251-12DJ and experience the difference of superior design and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability for the IC package, ensuring a longer lifespan for the product.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this memory IC compatible with standard electronic systems and power sources.

No. of Terminals: 28

Having 28 terminals provides sufficient connectivity options for interfacing with other components in the circuit.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can function reliably in normal operating conditions without overheating.

Organization: 256KX4

The organization of 256KX4 allows for efficient data storage and retrieval, optimizing the performance of the memory circuit.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high speed operation, making this memory IC energy efficient and fast.

No. of Words: 262144 words

Having a large number of words (262144) ensures ample storage capacity for data, making this memory IC suitable for various applications.

Memory Width: 4

A memory width of 4 ensures efficient data transfer and processing, enhancing the overall performance of the memory circuit.

Maximum Access Time: 120 ns

With a maximum access time of 120 ns, this memory IC can quickly retrieve data when needed, improving system responsiveness.

Technical Specifications

Other Function Memory ICs TMS44C251-12DJ attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

JESD-30 Code:

R-PDSO-J28

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

28

No. of Words:

262144 words

No. of Words Code:

256K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ28,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.005 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

95 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS44C251-12DJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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