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MR10Q010SCR

Everspin Technologies

MR10Q010SCR by Everspin Technologies

Everspin Technologies' MR10Q010SCR is a 128KX8 MEMORY CIRCUIT IC with 1048576 bit Memory Density. Operating at 3.3V, it features SYNCHRONOUS mode and has a small outline package style. Ideal for applications requiring high-speed memory access in commercial temperature environments.

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Aztec Data Supply Inc.

USA . 266 parts In-Stock

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AZTECH Wire

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Overview

Unlock the power of cutting-edge technology with the MR10Q010SCR by Everspin Technologies. This memory IC offers unparalleled quality and reliability, thanks to its innovative design and top-notch manufacturing process. Ideal for a wide range of applications, this product provides seamless performance and efficiency, making it a valuable asset for customers seeking high-speed data processing and storage solutions. Experience the advantages of advanced technology with the MR10Q010SCR and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ensuring a longer lifespan for the product.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into electronic systems.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfers, improving overall performance.

Nominal Supply Voltage (Vsup): 3.3V

3.3V supply voltage is a common standard in electronic devices, making this memory IC compatible with a wide range of systems.

Organisation: 128KX8

The organization of 128KX8 allows for efficient data storage and retrieval, enhancing the overall functionality of the product.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this memory IC energy-efficient and reliable.

Memory Density: 1048576 bit

With a high memory density of 1048576 bits, this memory IC can store a large amount of data efficiently.

Technical Specifications

Other Function Memory ICs MR10Q010SCR attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-G16

Length:

10.34 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8,3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.64 mm

Maximum Standby Current:

.005 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.52 mm

Trade Compliance

MR10Q010SCR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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