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TMS44C250-1SD

Texas Instruments

TMS44C250-1SD by Texas Instruments

TMS44C250-1SD by Texas Instruments is a 256KX4 MEMORY CIRCUIT with 1048576 bit Memory Density. It operates at 5V, has a Max Access Time of 100ns, and consumes up to 110mA. This IC is ideal for applications requiring fast data access in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,637 parts In-Stock

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3,637

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Digiode

USA . 3,261 parts In-Stock

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3,261

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Distributors (Availability)

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Parana Technologies

USA . 1,296 parts In-Stock

1+ parts

$2.684

100+ parts

-

1k+ parts

$3.167

10k+ parts

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1,296

$2.684

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$3.167

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DigiPath Technology Company

USA . 1,601 parts In-Stock

1+ parts

$2.956

100+ parts

$2.719

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1,601

$2.956

$2.719

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ChromeModa Solutions

Germany . 4,983 parts In-Stock

1+ parts

$3.016

100+ parts

$2.473

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4,983

$3.016

$2.473

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IDEA Electronic Components Group

UK . 597 parts In-Stock

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$3.016

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$2.714

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597

$3.016

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$2.714

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One Stop Electronics

USA . 1,073 parts In-Stock

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$12.000

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1,073

$12.000

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AZTECH Wire

Italy . 858 parts In-Stock

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$15.214

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Corphita

USA . 4,448 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TMS44C250-1SD by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in their products. The TMS44C250-1SD falls under the category of Other Function Memory ICs, making it versatile for various applications. Experience seamless performance and efficiency with this memory circuit, boasting a memory density of 1048576 bits and a maximum access time of 100 ns. Trust Texas Instruments to deliver innovative solutions that cater to your needs. Elevate your projects with the TMS44C250-1SD today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the memory IC, making it suitable for various environments.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, ensuring compatibility with most systems and devices.

Maximum Operating Temperature: 70 °C

Can withstand high operating temperatures, making it reliable in demanding conditions.

Organization: 256KX4

Organized as 256K words by 4 bits, providing efficient memory storage and access for data processing.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed performance.

Memory Density: 1048576 bit

High memory density of 1048576 bits allows for storing a large amount of data in a compact IC.

Maximum Access Time: 100 ns

Fast access time of 100 ns ensures quick response and data retrieval from the memory IC.

Technical Specifications

Other Function Memory ICs TMS44C250-1SD attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

100 ns

JESD-30 Code:

R-PZIP-T28

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

28

No. of Words:

262144 words

No. of Words Code:

256K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

ZIP

Package Equivalence Code:

ZIP28,.1

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

1.27 mm

Terminal Position:

ZIG-ZAG

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS44C250-1SD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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