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TMS4103NC

Texas Instruments

TMS4103NC by Texas Instruments

TMS4103NC by Texas Instruments is a MOS memory circuit IC with 28 terminals in an in-line rectangular package. It operates b/w -25°C to 85°C, making it suitable for various applications requiring reliable memory storage and retrieval. The through-hole terminal form and 2.54mm pitch enhance its versatility in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,739 parts In-Stock

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5,739

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Digiode

USA . 1,360 parts In-Stock

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1,360

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GES GmbH

Germany . 7 parts In-Stock

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7

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,932 parts In-Stock

1+ parts

$3.643

100+ parts

-

1k+ parts

$4.152

10k+ parts

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1,932

$3.643

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$4.152

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DigiPath Technology Company

USA . 1,395 parts In-Stock

1+ parts

$4.011

100+ parts

$3.690

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1,395

$4.011

$3.690

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ChromeModa Solutions

Germany . 1,643 parts In-Stock

1+ parts

$4.093

100+ parts

$3.356

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1,643

$4.093

$3.356

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IDEA Electronic Components Group

UK . 1,126 parts In-Stock

1+ parts

$4.093

100+ parts

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$3.684

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1,126

$4.093

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$3.684

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AZTECH Wire

Italy . 849 parts In-Stock

1+ parts

$10.779

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849

$10.779

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One Stop Electronics

USA . 985 parts In-Stock

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$23.000

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985

$23.000

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Corphita

USA . 3,696 parts In-Stock

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3,696

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Assy Fe

Spain . 66 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TMS4103NC by Texas Instruments. This high-quality memory circuit IC offers unparalleled reliability and performance, making it the perfect choice for a wide range of applications. Whether you're looking to upgrade your electronics or enhance your existing devices, the TMS4103NC delivers exceptional value and benefits that will exceed your expectations. Trust in Texas Instruments' reputation for excellence and experience the advantages of top-of-the-line technology with this innovative product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the memory IC, ensuring a longer lifespan.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various electronic devices or circuit boards.

No. of Terminals: 28

Having 28 terminals provides flexibility in connectivity options and allows for complex memory circuit configurations.

Package Style (Meter): IN-LINE

In-line package style makes it easy to install the memory IC in a linear layout, optimizing space utilization in the device.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this memory IC can withstand higher temperature environments without any performance issues.

Minimum Operating Temperature: -25 °C

With a low minimum operating temperature of -25°C, this memory IC remains functional even in cold environments.

Terminal Position: DUAL

Dual terminal position enhances the stability of connections and reduces the chance of signal interference, ensuring reliable performance.

Technology: MOS

MOS technology offers low power consumption and high speed operation, making this memory IC energy-efficient and fast in data processing.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides a secure connection to the circuit board, preventing any accidental disconnection during operation.

Terminal Pitch: 2.54 mm

With a terminal pitch of 2.54 mm, this memory IC is compatible with standard PCB layouts, making it easier to integrate into existing designs.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit type IC, this product offers reliable storage and retrieval of data, making it suitable for various memory-intensive applications.

Technical Specifications

Other Function Memory ICs TMS4103NC attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T28

Memory IC Type:

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4103NC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-99-779-7691, 5962997797691

NIIN

997797691

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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