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MR20H40CDFR

Everspin Technologies

MR20H40CDFR by Everspin Technologies

MR20H40CDFR by Everspin Technologies is a 512KX8 MEMORY IC with 4194304 bit Memory Density. Operating at 3.3V, it has a Max Supply Current of 46.5mA and can withstand temperatures from -40 to 85 °C. Ideal for industrial applications requiring high-speed synchronous memory solutions in a compact form factor.

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Vyrian

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Aztec Data Supply Inc.

USA . 62 parts In-Stock

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$4.247

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AZTECH Wire

Italy . 292 parts In-Stock

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Argo Parts USA

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Futuretech Components

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Overview

Discover the cutting-edge MR20H40CDFR by Everspin Technologies, a top-tier manufacturer renowned for innovation and reliability in the tech industry. This memory IC offers unparalleled performance and versatility in various applications. With a focus on quality and efficiency, Everspin's product promises seamless integration and optimal functionality. Elevate your projects with the value and benefits this advanced memory circuit provides, setting you ahead of the game in today's fast-paced market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package durable and ensures protection for the memory ICs inside.

Surface Mount: YES

Being surface mountable makes it easier to integrate into circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: SYNCHRONOUS

The synchronous operation allows for precise timing and control, improving overall performance and reliability.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V is common in many applications, providing compatibility and ease of integration.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this memory IC is suitable for industrial environments where heat may be a concern.

Memory Width: 8

Having a memory width of 8 bits allows for efficient data storage and retrieval in various applications.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making it an energy-efficient and reliable choice.

Moisture Sensitivity Level (MSL): 3

A moisture sensitivity level of 3 indicates that this memory IC has moderate sensitivity to moisture, suitable for most environments.

Technical Specifications

Other Function Memory ICs MR20H40CDFR attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Maximum Standby Current:

.00075 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

46.5 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

MR20H40CDFR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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