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M36W216B85ZA6T

STMicroelectronics

M36W216B85ZA6T by STMicroelectronics

M36W216B85ZA6T from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage. It features a 1M x 16 organization and operates in temperatures ranging from -40 °C to 85 °C. Ideal for industrial applications, it offers reliable performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,476 parts In-Stock

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3,476

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Anansix

USA . 1,370 parts In-Stock

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1,370

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Vyrian

USA . 1,316 parts In-Stock

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1,316

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 430 parts In-Stock

1+ parts

$3.996

100+ parts

-

1k+ parts

$3.596

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430

$3.996

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$3.596

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MKK Technologies

India . 82 parts In-Stock

1+ parts

$7.513

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82

$7.513

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DigiPath Technology Company

USA . 82 parts In-Stock

1+ parts

$7.513

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82

$7.513

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Corphita

USA . 4,023 parts In-Stock

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4,023

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Parana Technologies

USA . 875 parts In-Stock

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$4.777

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875

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$4.777

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Overview

Unlock exceptional performance and reliability with the M36W216B85ZA6T from STMicroelectronics—a leader in innovative memory solutions. This low-profile, surface-mount Memory IC is designed for a wide range of industrial applications, boasting a robust temperature tolerance that ensures consistent operation in demanding environments. Experience the advantages of advanced CMOS technology, providing seamless integration and efficient power management, ultimately enhancing your system's capability and longevity. Trust in STMicroelectronics to elevate your projects with unparalleled quality and cutting-edge performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy materials enhances the reliability and longevity of the memory IC.

Surface Mount: YES

Surface mount technology allows for high-density packaging and efficient manufacturing processes.

Package Shape: RECTANGULAR

A rectangular package shape enables efficient use of PCB space and simplifies layout design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster access times compared to synchronous alternatives, making it ideal for immediate data retrieval.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this IC energy-efficient and suitable for battery-operated devices.

No. of Terminals: 66

With 66 terminals, the IC supports complex interfacing options and functionality.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile and fine pitch grid array design optimize performance and save valuable board space.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C ensures reliability in various industrial applications.

Organization: 1MX16

The 1MX16 organization provides versatile data handling capabilities, suitable for various applications.

Minimum Operating Temperature: -40 °C

Capable of operating at -40 °C, this IC is suitable for extreme environmental conditions.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient heat dissipation and space optimization on the PCB.

Maximum Seated Height: 1.4 mm

A seated height of 1.4 mm supports compact designs without compromising performance.

Width: 8 mm

A width of 8 mm allows for scalable integration into various electronic systems.

Minimum Supply Voltage (Vsup): 2.7 V

This IC operates effectively at a minimum supply voltage of 2.7V, enhancing compatibility with low-power applications.

Length: 12 mm

The compact length of 12 mm contributes to space-saving designs in modern electronics.

Temperature Grade: INDUSTRIAL

Designed for industrial-grade applications, this IC ensures reliable performance under harsh conditions.

Technology: CMOS

CMOS technology offers low power consumption and high reliability, making it suitable for energy-sensitive applications.

Terminal Form: BALL

Ball terminals provide robust connections and facilitate better soldering process during assembly.

No. of Words: 1048576 words

With 1,048,576 words of memory, this IC supports extensive data storage for complex applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing and communication between components.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for finer connections, making it suitable for high-density layouts.

No. of Words Code: 1M

The 1M word code indicates a substantial memory capacity, ideal for diverse data management needs.

Maximum Supply Voltage (Vsup): 3.3 V

A maximum supply voltage of 3.3V ensures compatibility with a wide range of electronic systems.

Memory Density: 16777216 bit

With a memory density of 16M bits, this IC provides ample storage space, catering to advanced applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, it is optimized specifically for data storage and retrieval applications.

Technical Specifications

Other Function Memory ICs M36W216B85ZA6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 16 SRAM

JESD-30 Code:

R-PBGA-B66

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216B85ZA6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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