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M36W216B100ZA1T

STMicroelectronics

M36W216B100ZA1T by STMicroelectronics

M36W216B100ZA1T from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage. It features a 16-bit width and operates within -40 °C to 70 °C. Ideal for compact applications, it offers high density with 16Mbit storage in a 66-terminal grid array package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,994 parts In-Stock

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Vyrian

USA . 242 parts In-Stock

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Anansix

USA . 178 parts In-Stock

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178

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 822 parts In-Stock

1+ parts

$3.169

100+ parts

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$2.852

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822

$3.169

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MKK Technologies

India . 1,613 parts In-Stock

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$5.960

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DigiPath Technology Company

USA . 1,613 parts In-Stock

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$5.960

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$5.960

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Corphita

USA . 2,640 parts In-Stock

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Parana Technologies

USA . 1,303 parts In-Stock

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$3.790

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Overview

Unlock the potential of your next project with the M36W216B100ZA1T from STMicroelectronics, a leader renowned for quality and innovation. This low-profile memory IC excels in various applications, delivering reliability and efficiency in demanding environments. Experience seamless asynchronous operations and robust performance tailored to enhance your designs. Trust STMicroelectronics for superior technology that drives success, ensuring you stay ahead in today’s competitive landscape!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making this IC reliable in various applications.

Surface Mount: YES

Surface mount technology allows for compact design and easy integration into modern electronic circuits, saving space on PCBs.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization and makes it easier to place in a variety of layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and simplifies design as it does not depend on a clock signal for operation.

Nominal Supply Voltage / Vsup: 3 V

A nominal supply voltage of 3V balances performance and power consumption, making it suitable for battery-powered devices.

No. of Terminals: 66

The 66 terminals allow for a significant number of connections, enabling complex functionality within a compact footprint.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This low-profile, fine-pitch grid array design enhances thermal performance and allows for higher density component placement.

Maximum Operating Temperature: 70 °C

Operating at up to 70 °C ensures the IC can function effectively in a wide range of ambient temperatures, suitable for commercial use.

Organization: 1MX16

The 1MX16 organization optimizes data access and storage efficiency, providing a good balance between speed and capacity.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, this IC can operate in cooler environments without issues.

Terminal Position: BOTTOM

Bottom terminal positioning improves substrate routing efficiency and contributes to a more compact design.

Maximum Seated Height: 1.4 mm

A low seated height of 1.4 mm is essential for low-profile applications, making it ideal for sleek design requirements.

Width: 8 mm

An 8 mm width means this IC is compatible with tight layouts while still maintaining performance.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum operating voltage of 2.7V allows for flexibility in power supply choices, which is critical for many applications.

Length: 12 mm

The compact length of 12 mm ensures efficient use of space on PCBs without sacrificing performance.

Temperature Grade: COMMERCIAL

As a commercially rated product, it is designed for wide availability and meets standard performance expectations.

Technology: CMOS

CMOS technology provides low power consumption and high density, making this memory IC suitable for modern electronic applications.

Terminal Form: BALL

Ball terminal design improves soldering quality and reliability in surface mount applications.

No. of Words: 1048576 words

With over a million words of memory, it provides substantial storage capacity for various applications.

Memory Width: 16

With a memory width of 16 bits, this IC allows for efficient data processing, suitable for high-performance needs.

Terminal Pitch: 0.8 mm

0.8 mm terminal pitch is conducive for high-density mounting and helps in reducing the overall footprint.

No. of Words Code: 1M

Featuring a code of 1M words, it enhances the device's capability to handle complex data manipulations.

Maximum Supply Voltage (Vsup): 3.3 V

The maximum voltage rating of 3.3V ensures compatibility with a wide array of devices, enhancing integration flexibility.

Memory Density: 16777216 bit

A memory density of 16M bits offers ample storage space for intensive applications or large data sets.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, this IC is essential for storing and retrieving data, making it fundamental to modern electronics.

Technical Specifications

Other Function Memory ICs M36W216B100ZA1T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 16 SRAM

JESD-30 Code:

R-PBGA-B66

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216B100ZA1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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