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M36W0R5020T0ZAQT

STMicroelectronics

M36W0R5020T0ZAQT by STMicroelectronics

M36W0R5020T0ZAQT by STMicroelectronics is a versatile memory IC featuring 2M words of mixed FLASH+SRAM with a max access time of 70 ns. It operates asynchronously at a nominal voltage of 1.8V, suitable for industrial applications. Its compact design (8x10 mm) ensures efficient space utilization in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,804 parts In-Stock

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3,804

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Digiode

USA . 2,882 parts In-Stock

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2,882

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Anansix

USA . 849 parts In-Stock

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849

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,370 parts In-Stock

1+ parts

$2.102

100+ parts

-

1k+ parts

$1.892

10k+ parts

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2,370

$2.102

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$1.892

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MKK Technologies

India . 1,208 parts In-Stock

1+ parts

$3.953

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1,208

$3.953

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DigiPath Technology Company

USA . 1,208 parts In-Stock

1+ parts

$3.953

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1,208

$3.953

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Corphita

USA . 2,698 parts In-Stock

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2,698

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Parana Technologies

USA . 206 parts In-Stock

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$2.514

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206

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$2.514

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Overview

Unlock innovation with the M36W0R5020T0ZAQT from STMicroelectronics, a leader in quality and reliability. This advanced memory IC combines FLASH and SRAM technologies, perfect for demanding applications in automotive and industrial sectors. Its compact design and robust temperature range ensure consistent performance, while low power consumption enhances efficiency. Elevate your projects with a trusted solution that delivers superior speed and durability, empowering your designs to excel.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures lightweight and cost-effective packaging, enhancing durability and reliability.

Surface Mount: YES

Surface mount technology allows for compact designs, saving space on printed circuit boards (PCBs) and enabling more efficient assembly.

Package Shape: RECTANGULAR

A rectangular shape optimizes layout on PCBs, making it easier to integrate with other components.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler control logic and faster access times, providing greater flexibility in system design.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM offers a balance of quick read/write capabilities with non-volatile storage, making it versatile for various applications.

Nominal Supply Voltage / Vsup: 1.8 V

A low nominal voltage of 1.8 V ensures power efficiency and compatibility with modern low-power devices.

Power Supplies (V): 1.8

Operating at 1.8 V contributes to reduced power consumption, which is crucial for battery-operated devices.

No. of Terminals: 88

Having 88 terminals allows for a versatile and robust connection to various systems, accommodating more functions and enabling advanced interfacing.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array packaging in a thin profile saves space and improves thermal performance, making it suitable for high-density applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product is suitable for a wide range of industrial applications.

Organization: 2MX16

The 2MX16 organization provides a structured layout for data storage, enhancing efficiency in accessing data.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C allows for use in extreme environments, increasing the product's applicability.

Terminal Finish: TIN LEAD

The tin lead finish enhances solderability and reliability of electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning aids in efficient heat dissipation and creates a smaller footprint on the PCB.

Maximum Seated Height: 1.2 mm

A low seated height enables more compact designs and efficient use of space on the circuit board.

Width: 8 mm

At 8 mm in width, this memory IC is designed to fit compactly within modern electronic devices.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum supply voltage of 1.7 V allows for operation in low-power environments, making it ideal for energy-efficient applications.

Length: 10 mm

The 10 mm length contributes to the overall compactness of the product, making it suitable for space-constrained applications.

Temperature Grade: INDUSTRIAL

Rated for industrial temperatures, this product is reliable for use in harsh environments and demanding applications.

Technology: CMOS

CMOS technology allows for low power consumption and high-speed operation, enhancing performance and battery life.

Terminal Form: BALL

Ball terminal form supports enhanced solder joint strength, reliability, and the capability to use modern assembly techniques.

Maximum Supply Current: 45 mA

With a maximum supply current of 45 mA, this product is optimized for energy efficiency in portable and battery-operated devices.

No. of Words: 2097152 words

The large memory capacity of over 2 million words meets the demands of data-intensive applications.

Memory Width: 16

A memory width of 16 bits enhances data throughput, making it suitable for applications requiring high-speed data access.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for a compact design without sacrificing reliability, ideal for modern circuit board designs.

No. of Words Code: 2M

The '2M' words code highlights the substantial storage capability, fitting various application needs.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage of 1.95 V provides a safe operating range while maintaining energy efficiency.

Memory Density: 33554432 bit

A high memory density of over 33 million bits supports extensive data storage and fast access times essential for modern applications.

Memory IC Type: MEMORY CIRCUIT

Categorized as a memory circuit, this product is specialized for storage, ensuring it meets application-specific needs.

Maximum Standby Current: 0.00005 Amp

A very low standby current of 0.00005 A emphasizes energy efficiency, especially in standby modes for battery-operated systems.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, this IC ensures fast data retrieval suitable for high-performance applications.

Technical Specifications

Other Function Memory ICs M36W0R5020T0ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

SRAM IS ORGANIZED AS 256K X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00005 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R5020T0ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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