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M36W108T120ZN6

STMicroelectronics

M36W108T120ZN6 by STMicroelectronics

M36W108T120ZN6 from STMicroelectronics is a mixed memory IC featuring 1M x 8 organization with Flash+SRAM technology. It operates asynchronously at temperatures ranging from -40 °C to 85°C, supporting supply voltages of 2.7V to 3.6V. Ideal for industrial applications, it offers a max access time of 120 ns and comes in a very thin profile grid array package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,186 parts In-Stock

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3,186

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Vyrian

USA . 3,118 parts In-Stock

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3,118

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Anansix

USA . 1,487 parts In-Stock

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1,487

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,627 parts In-Stock

1+ parts

$5.083

100+ parts

-

1k+ parts

$4.575

10k+ parts

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1,627

$5.083

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$4.575

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MKK Technologies

India . 853 parts In-Stock

1+ parts

$9.558

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853

$9.558

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DigiPath Technology Company

USA . 853 parts In-Stock

1+ parts

$9.558

100+ parts

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853

$9.558

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Corphita

USA . 4,342 parts In-Stock

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4,342

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Parana Technologies

USA . 277 parts In-Stock

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$6.078

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277

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$6.078

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Overview

Unlock the power of innovation with the M36W108T120ZN6 from STMicroelectronics—a leader in cutting-edge technology. This versatile memory IC combines high-performance Flash and SRAM, perfect for various applications like industrial automation and consumer electronics. With a robust design that withstands extreme temperatures, it ensures reliability and efficiency. Elevate your projects while enjoying superior quality and support from a trusted manufacturer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making this IC suitable for various applications.

Surface Mount: YES

Being surface mount compatible allows for easier integration into modern PCB designs, saving space and improving performance.

Package Shape: RECTANGULAR

The rectangular package shape optimizes board space and allows for efficient layout in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster response times, making it ideal for applications that require quick data processing.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM memory types offers flexibility for various data storage and retrieval operations, enhancing overall performance.

Power Supplies (V): 3/3.3

Compatible with both 3V and 3.3V power supplies, it provides greater flexibility in diverse electronic designs.

No. of Terminals: 48

A higher number of terminals allows for increased connectivity options and integration with other components, facilitating more complex applications.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The very thin profile grid array style aids in dense layouts of modern electronics, contributing to miniaturization.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, it is suitable for industrial applications where higher temperatures may be encountered.

Organization: 1MX8

The organization of 1MX8 allows better data management and efficient storage, catering to various application needs.

Minimum Operating Temperature: -40 °C

The extended minimum operating temperature makes it ideal for use in harsh environments, ensuring reliable performance.

Terminal Finish: TIN LEAD

Tin lead finishing enhances solderability, ensuring more reliable connections during assembly.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for heat dissipation and facilitates easier mounting on PCBs.

Maximum Seated Height: 1 mm

A maximum seated height of 1 mm enables low-profile designs, making it ideal for space-constrained applications.

Width: 9.8 mm

The compact width of 9.8 mm helps in fitting the component into narrower PCB layouts.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage of 2.7 V opens up options for use in low-voltage applications.

Length: 11.8 mm

The length of 11.8 mm aids in balancing performance and space efficiency in electronic designs.

Temperature Grade: INDUSTRIAL

Being rated for industrial temperature grades ensures reliability in challenging environments.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making it ideal for battery-powered devices.

Terminal Form: BUTT

Butt terminals provide good mechanical strength and help ensure durability in connections.

Maximum Supply Current: 100 mA

A maximum supply current of 100 mA allows for robust performance in demanding applications.

No. of Words: 1048576 words

With over a million words of storage, it supports memory-intensive applications efficiently.

Memory Width: 8

An 8-bit memory width is suited for standard data processing tasks commonly required in many electronic devices.

Terminal Pitch: 1 mm

A terminal pitch of 1 mm optimizes space on the PCB while ensuring proper electrical connections.

No. of Words Code: 1M

With a memory organization of 1M words, this product can handle substantial amounts of data efficiently.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6 V allows for compatibility with a range of power sources for diverse applications.

Memory Density: 8388608 bit

A memory density of 8 Mbits provides ample space for data storage, making it suitable for various applications.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit type, it is specifically designed for efficient data storing and retrieval tasks.

Maximum Standby Current: 0.00002 Amp

A very low maximum standby current indicates excellent power efficiency, contributing to longer battery life in mobile applications.

Maximum Access Time: 120 ns

With a maximum access time of 120 ns, it offers fast operation suitable for time-sensitive applications.

Technical Specifications

Other Function Memory ICs M36W108T120ZN6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T120ZN6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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