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M36W108T100ZM1

STMicroelectronics

M36W108T100ZM1 by STMicroelectronics

M36W108T100ZM1 from STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 8Mbit density with Flash+SRAM technology. It operates at 2.7-3.6V and supports up to 100ns access time, ideal for commercial applications requiring efficient data storage. Its compact design (48 terminals) ensures easy integration in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,342 parts In-Stock

1+ parts

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4,342

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Digiode

USA . 4,091 parts In-Stock

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4,091

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Anansix

USA . 2,630 parts In-Stock

1+ parts

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2,630

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 762 parts In-Stock

1+ parts

$2.570

100+ parts

-

1k+ parts

$2.313

10k+ parts

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762

$2.570

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$2.313

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MKK Technologies

India . 2,012 parts In-Stock

1+ parts

$4.832

100+ parts

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2,012

$4.832

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DigiPath Technology Company

USA . 2,012 parts In-Stock

1+ parts

$4.832

100+ parts

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2,012

$4.832

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Parana Technologies

USA . 1,718 parts In-Stock

1+ parts

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$3.072

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1,718

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$3.072

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Corphita

USA . 1,011 parts In-Stock

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1,011

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Overview

Unlock a new era of performance with the M36W108T100ZM1 from STMicroelectronics, a leader in innovation and quality. This advanced memory IC combines the reliability of FLASH and SRAM technologies, making it perfect for a wide range of applications—from consumer electronics to industrial automation. With its low power consumption and high efficiency, it not only enhances device performance but also drives cost savings, empowering you to elevate your projects with confidence. Choose STMicroelectronics for unparalleled support and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures robustness and reliability in various environments, making it suitable for a wide range of applications.

Surface Mount: YES

The surface mount capability allows for compact design and efficient use of PCB space, making it ideal for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape provides optimal space utilization on the PCB, enhancing design flexibility.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode enables faster response times, making the device suitable for high-speed applications.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM memories allows for versatile applications, facilitating both non-volatile storage and fast read/write operations.

Power Supplies (V): 3/3.3

Compatible with both 3V and 3.3V power supplies, it simplifies integration into various electronic systems.

No. of Terminals: 48

The 48 terminals provide ample connectivity options, ensuring extensive interface possibilities with other components.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The low-profile grid array package style minimizes height, making it suitable for space-constrained designs.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this memory IC can operate in moderately high-temperature environments, enhancing its reliability.

Organization: 1MX8

The memory organization of 1MX8 allows for efficient data storage and retrieval, making it effective for applications requiring dense memory.

Minimum Operating Temperature: 0 °C

The 0 °C minimum operating temperature ensures functionality in varied climates, making it versatile for numerous applications.

Terminal Finish: TIN LEAD

The tin-lead terminal finish enhances solderability, ensuring reliable connections during assembly.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient heat dissipation and optimal layout on PCBs.

Maximum Seated Height: 1.35 mm

The low seated height supports compact design requirements, suitable for portable and space-saving devices.

Width: 9.8 mm

A width of 9.8 mm fits well into various form factors, allowing for flexible application designs.

Minimum Supply Voltage (Vsup): 2.7 V

A minimum supply voltage of 2.7V allows for broader compatibility with battery-powered devices, extending the application range.

Length: 11.8 mm

The compact length of 11.8 mm contributes to space efficiency in circuit board design.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliability in typical commercial environments, broadening its potential uses.

Technology: CMOS

Utilizing CMOS technology, this memory IC offers low power consumption and high integration, making it energy-efficient.

Terminal Form: BALL

Ball terminal form contributes to better soldering and increased flexibility in PCB layout.

Maximum Supply Current: 100 mA

With a maximum supply current of 100 mA, it ensures adequate power availability for demanding applications.

No. of Words: 1048576 words

The substantial memory capacity of 1,048,576 words supports complex applications requiring significant data storage.

Memory Width: 8

An 8-bit memory width is suitable for standard data buses, facilitating easy integration with common microcontrollers.

Terminal Pitch: 1 mm

The 1 mm terminal pitch is advantageous for denser routing on PCBs, enabling modern, high-density designs.

No. of Words Code: 1M

The 1M words code ensures sufficient storage for a variety of applications, enhancing its versatility.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V ensures compatibility with a wide array of applications, enhancing flexibility.

Memory Density: 8388608 bit

The high memory density of 8,388,608 bits makes it an excellent choice for data-intensive applications.

Memory IC Type: MEMORY CIRCUIT

Being categorized as a memory circuit confirms its primary function in data storage, making it essential in electronic designs.

Maximum Standby Current: 0.00002 Amp

The extremely low maximum standby current contributes to energy efficiency and longer battery life in portable devices.

Maximum Access Time: 100 ns

With a maximum access time of 100 ns, it ensures rapid data retrieval, which is crucial for performance-sensitive applications.

Technical Specifications

Other Function Memory ICs M36W108T100ZM1 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T100ZM1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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