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M36LLR8760T1ZAQT

STMicroelectronics

M36LLR8760T1ZAQT by STMicroelectronics

M36LLR8760T1ZAQT by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C, ideal for compact electronic applications. With 88 terminals in a fine-pitch grid array, it ensures efficient space utilization.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,801 parts In-Stock

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1,801

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Anansix

USA . 1,777 parts In-Stock

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1,777

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Digiode

USA . 1,154 parts In-Stock

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1,154

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,796 parts In-Stock

1+ parts

$4.905

100+ parts

-

1k+ parts

$4.415

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1,796

$4.905

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$4.415

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MKK Technologies

India . 490 parts In-Stock

1+ parts

$9.224

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490

$9.224

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DigiPath Technology Company

USA . 490 parts In-Stock

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$9.224

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490

$9.224

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Parana Technologies

USA . 1,695 parts In-Stock

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$5.865

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1,695

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$5.865

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Corphita

USA . 627 parts In-Stock

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627

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Overview

Unlock unparalleled performance with the M36LLR8760T1ZAQT from STMicroelectronics, a leader in innovative memory solutions. This advanced Flash+PSRAM memory IC is designed for efficiency, operating seamlessly in diverse applications—from IoT devices to high-performance computing. Enjoy the benefits of reduced power consumption and compact design, all while ensuring reliability and longevity. Elevate your projects with STMicroelectronics' commitment to quality and cutting-edge technology, delivering exceptional value you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Utilizing durable plastic/epoxy materials ensures long-term reliability and resistance to environmental factors.

Surface Mount: YES

Surface mount technology allows for efficient use of PCB space, enabling compact designs.

Package Shape: RECTANGULAR

The rectangular shape facilitates standardized fittings and is compatible with a variety of layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation improves response time, making it suitable for high-speed applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM types harnesses the strengths of both technologies, providing fast access and high storage capacity.

Nominal Supply Voltage / Vsup: 1.8 V

Operating at a low voltage of 1.8V reduces power consumption, making it energy-efficient and ideal for battery-operated devices.

Power Supplies (V): 1.8

The consistent power supply requirement simplifies design considerations and integration into existing systems.

No. of Terminals: 88

With 88 terminals, the device supports extensive connectivity options, which enhances functionality.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This style allows for a lower profile mounting, providing flexibility in design and accommodating space-constrained applications.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature ensures reliable performance in demanding environments.

Organization: 16MX16

The 16MX16 organization allows for vast storage capabilities, making it suitable for data-intensive applications.

Minimum Operating Temperature: -25 °C

A wide temperature range of -25 °C to 85 °C makes this IC versatile for various climatic conditions.

Terminal Finish: TIN LEAD

The tin-lead finish ensures good solderability and reliability in mechanical connections.

Terminal Position: BOTTOM

Bottom terminal positioning helps in optimizing board layout and enhancing thermal performance.

Maximum Seated Height: 1.4 mm

The low seated height allows for a sleek design, contributing to overall compactness.

Width: 8 mm

Compact 8 mm width makes this IC easy to integrate into tight spaces.

Minimum Supply Voltage (Vsup): 1.7 V

The range of supply voltage flexibility allows for broader application in various devices.

Length: 10 mm

A short length contributes to a small footprint, enhancing the design efficiency.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it a reliable choice for various applications.

Terminal Form: BALL

Ball terminals enable a lower profile and improved thermal management on PCBs.

Maximum Supply Current: 52 mA

Rated for a maximum supply current of 52 mA, it supports sufficient performance without excessive power draw.

No. of Words: 16777216 words

The capacity for 16,777,216 words offers considerable storage, making it ideal for applications needing extensive data handling.

Memory Width: 16

A 16-bit memory width ensures efficient data throughput, vital for high-performance applications.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch allows for high-density packaging, supporting modern design requirements.

No. of Words Code: 16M

A 16M word code indicates a significant data capacity range, suitable for complex applications.

Maximum Supply Voltage (Vsup): 1.95 V

Supports up to 1.95 V, providing flexibility in system design while ensuring stability.

Memory Density: 268435456 bit

With a high memory density, this IC is capable of handling substantial data processing tasks.

Memory IC Type: MEMORY CIRCUIT

Being a dedicated memory circuit, it optimizes storage and retrieval efficiency, essential for performance-critical applications.

Maximum Standby Current: 0.00011 Amp

A low maximum standby current ensures minimal power waste, perfect for energy-sensitive applications.

Technical Specifications

Other Function Memory ICs M36LLR8760T1ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8760T1ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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