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M36L0R7050B0ZAQE

STMicroelectronics

M36L0R7050B0ZAQE by STMicroelectronics

M36L0R7050B0ZAQE by STMicroelectronics is a mixed memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It supports asynchronous mode and has a max temp of 85 °C. Ideal for compact applications requiring efficient data storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,634 parts In-Stock

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Anansix

USA . 783 parts In-Stock

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783

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Vyrian

USA . 260 parts In-Stock

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260

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 181 parts In-Stock

1+ parts

$2.766

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$2.490

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181

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$2.490

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MKK Technologies

India . 246 parts In-Stock

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$5.202

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DigiPath Technology Company

USA . 246 parts In-Stock

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$5.202

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$5.202

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Parana Technologies

USA . 1,605 parts In-Stock

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$3.308

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$3.308

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Corphita

USA . 340 parts In-Stock

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Overview

Unlock the future of memory solutions with the M36L0R7050B0ZAQE from STMicroelectronics, a leader in innovative semiconductor technology. This advanced memory IC combines FLASH and PSRAM, offering unparalleled efficiency and reliability for your designs. With its compact footprint and robust temperature range, it’s perfect for a wide array of applications—from IoT devices to automotive systems. Elevate your projects with ST's commitment to quality and performance, ensuring you stay ahead in today’s competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures a lightweight and durable package that provides efficient thermal conductivity and protection against environmental factors.

Surface Mount: YES

Surface mount technology allows for a smaller footprint on PCBs, enabling compact designs and efficient use of board space.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates easier placement and alignment on circuit boards, contributing to manufacturing efficiency.

Operating Mode: ASYNCHRONOUS

Asynchronous operation is beneficial for applications requiring flexible timing and quicker response, improving overall system performance.

Mixed Memory Type: FLASH+PSRAM

The integration of FLASH and PSRAM provides versatile memory solutions suitable for a variety of applications, enhancing data storage and speed capabilities.

Nominal Supply Voltage / Vsup: 1.8 V

Operating at a low nominal supply voltage contributes to power efficiency, minimizing energy consumption and heat generation.

Power Supplies (V): 1.8

A consistent supply voltage of 1.8 V supports the use of modern low-power systems, making it ideal for battery-operated devices.

No. of Terminals: 88

A higher number of terminals allows for increased connectivity options for robust data transmission and interface functionalities.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The fine pitch and thin profile design optimize space and allow for high-density assemblies, accommodating miniature device designs.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature ensures reliability in demanding environments, making it suitable for industrial applications.

Organization: 8MX16

An 8Mx16 organization provides substantial data capacity, allowing for efficient data handling in various applications.

Minimum Operating Temperature: -25 °C

The wide operating temperature range enhances versatility, allowing the IC to perform in extreme conditions.

Terminal Finish: TIN SILVER COPPER

This terminal finish provides improved corrosion resistance and better electrical performance, ensuring long-term reliability.

Terminal Position: BOTTOM

Bottom terminal positioning contributes to a lower profile and better thermal management in multi-layer board designs.

Maximum Seated Height: 1.2 mm

A low seated height aids in maintaining a compact design in applications where space is critical.

Width: 8 mm

Compact width ensures efficient space usage on the PCB, making it suitable for compact devices.

Minimum Supply Voltage (Vsup): 1.7 V

The low minimum supply voltage improves compatibility with a wide range of power sources.

Length: 10 mm

This moderate length contributes to an efficient space-saving design, vital for modern electronic devices.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation, essential for energy-efficient applications.

Terminal Form: BALL

Ball terminal form enhances the ease of soldering and improves connection reliability on printed circuit boards.

Maximum Supply Current: 47 mA

A moderate maximum supply current allows for efficient power usage, benefiting battery-operated devices.

No. of Words: 8388608 words

This large word count provides ample memory space for data-intensive applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data handling and processing, improving overall performance.

Terminal Pitch: 0.8 mm

A fine terminal pitch supports high-density packaging, essential for compact and powerful devices.

No. of Words Code: 8M

An 8M word code signifies substantial data capacity, making this memory IC well-suited for advanced applications.

Maximum Supply Voltage (Vsup): 1.95 V

The higher maximum supply voltage extends the operational flexibility of the IC, supporting a wider range of systems.

Memory Density: 134217728 bit

High memory density facilitates the handling of large datasets, critical for data-heavy applications.

Memory IC Type: MEMORY CIRCUIT

Being classified as a memory circuit makes it suitable for various applications requiring data storage solutions.

Maximum Standby Current: 0.00007 Amp

An extremely low standby current is crucial for battery-powered applications, extending battery life significantly.

Technical Specifications

Other Function Memory ICs M36L0R7050B0ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 2M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7050B0ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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