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M36L0R7050L1ZAME

STMicroelectronics

M36L0R7050L1ZAME by STMicroelectronics

M36L0R7050L1ZAME from STMicroelectronics is a versatile memory IC featuring 64M words of mixed FLASH+PSRAM, operating at 1.8V with a max temp of 85 °C. Its compact design (8mm x 10.05mm) and asynchronous mode make it ideal for space-constrained applications. This device supports efficient data storage in commercial electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,756 parts In-Stock

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Anansix

USA . 2,037 parts In-Stock

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2,037

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Vyrian

USA . 444 parts In-Stock

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444

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 123 parts In-Stock

1+ parts

$3.609

100+ parts

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$3.248

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123

$3.609

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$3.248

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MKK Technologies

India . 1,403 parts In-Stock

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$6.787

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$6.787

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DigiPath Technology Company

USA . 1,403 parts In-Stock

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$6.787

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$6.787

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Corphita

USA . 796 parts In-Stock

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Parana Technologies

USA . 345 parts In-Stock

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$4.315

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345

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Overview

Unlock limitless possibilities with the M36L0R7050L1ZAME from STMicroelectronics, a leader in innovation and quality. This advanced flash and PSRAM memory solution offers exceptional performance in compact designs, ideal for consumer electronics, IoT devices, and automotive applications. With its robust operating range and low power consumption, it ensures reliability while enhancing efficiency. Experience the perfect blend of value and cutting-edge technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, ensuring the longevity of the product.

Surface Mount: YES

The surface mount capability allows for easier and more efficient integration on compact circuit boards, saving space in designs.

Package Shape: RECTANGULAR

Rectangular packaging optimizes space utilization on the PCB, making it suitable for various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster access times, making it advantageous for applications that require quick data retrieval.

Mixed Memory Type: FLASH+PSRAM

The combination of flash and PSRAM types provides flexibility for storage needs, accommodating both persistent and dynamic memory requirements.

Nominal Supply Voltage / Vsup: 1.8 V

A low nominal supply voltage enhances power efficiency, making this IC suitable for battery-operated devices.

Power Supplies (V): 1.8

Utilization of a 1.8V power supply ensures compatibility with modern low-power systems, reducing overall energy consumption.

No. of Terminals: 88

Having 88 terminals allows for extensive connectivity options, facilitating complex applications and systems integration.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array design with a thin profile and fine pitch is ideal for high-density applications, supporting advanced miniaturization.

Maximum Operating Temperature: 85 °C

Operating up to 85 °C ensures reliability in a variety of environments, from consumer electronics to industrial applications.

Organization: 64MX32

The organization of 64MX32 contributes to efficient data handling and enhances the performance for a wide range of applications.

Minimum Operating Temperature: -25 °C

Withstanding temperatures as low as -25 °C ensures functionality in colder environments, broadening its applicability.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates compact layout designs and optimizes board space, enhancing overall design efficiency.

Maximum Seated Height: 1.2 mm

A low seated height minimizes the overall profile of the device, which is beneficial for slim and compact designs.

Width: 8 mm

A compact width of 8 mm contributes to efficient space management in tight layouts, ideal for modern electronics.

Minimum Supply Voltage (Vsup): 1.7 V

The low minimum supply voltage ensures compatibility with a variety of power management systems, making it versatile.

Length: 10.05 mm

With a length of just 10.05 mm, this IC is well-suited for use in space-constrained applications.

Temperature Grade: COMMERCIAL EXTENDED

The commercial extended temperature grade indicates robustness for a range of applications, including consumer and industrial uses.

Technology: CMOS

CMOS technology provides low power consumption and high speed, making it ideal for modern, high-performance applications.

Terminal Form: BALL

The ball terminal form supports easy and reliable mounting on PCBs, enhancing manufacturing yields and assembly efficiency.

No. of Words: 67108864 words

An extensive word count provides ample data capacity for applications, allowing for more complex data storage solutions.

Memory Width: 32

A memory width of 32 bits improves data processing efficiency and supports high-performance applications.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm strikes a good balance between density and manufacturability, ideal for compact designs.

No. of Words Code: 64M

The 64M code gives insight into the IC's extensive capacity, making it suitable for large-scale data applications.

Maximum Supply Voltage (Vsup): 1.95 V

The ability to operate up to 1.95V provides flexibility for varying voltage levels in system designs.

Memory Density: 2147483648 bit

The high memory density enables extensive data storage, making it a great choice for applications requiring large memory solutions.

Memory IC Type: MEMORY CIRCUIT

Classifying as a memory circuit highlights the specialized functionality, catering specifically to applications needing reliable data retention.

Technical Specifications

Other Function Memory ICs M36L0R7050L1ZAME attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

R-PBGA-B88

Length:

10.05 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

32

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

64MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7050L1ZAME Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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