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M36L0R7050T0ZAQT

STMicroelectronics

M36L0R7050T0ZAQT by STMicroelectronics

M36L0R7050T0ZAQT by STMicroelectronics is a versatile memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and PSRAM in a compact grid array package, ideal for low-power applications. With an operating temp range of -25 °C to 85 °C, it ensures reliability in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,223 parts In-Stock

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1,223

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Anansix

USA . 573 parts In-Stock

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573

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Digiode

USA . 162 parts In-Stock

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162

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,516 parts In-Stock

1+ parts

$4.293

100+ parts

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1k+ parts

$3.863

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1,516

$4.293

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$3.863

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MKK Technologies

India . 2,266 parts In-Stock

1+ parts

$8.072

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2,266

$8.072

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DigiPath Technology Company

USA . 2,266 parts In-Stock

1+ parts

$8.072

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2,266

$8.072

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Corphita

USA . 1,469 parts In-Stock

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1,469

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Parana Technologies

USA . 1,259 parts In-Stock

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$5.133

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1,259

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$5.133

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Overview

Unlock unparalleled performance with the M36L0R7050T0ZAQT from STMicroelectronics! This cutting-edge memory solution combines FLASH and PSRAM technology, ensuring swift data access and reliability across a myriad of applications. With its robust design and energy-efficient operation, you can count on consistent quality that enhances your projects. Choose STMicroelectronics for innovation and excellence, maximizing value and performance for your next breakthrough!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors.

Surface Mount: YES

Surface mount technology allows for a compact design and easier integration into modern electronic circuits.

Package Shape: RECTANGULAR

Rectangular shape optimizes space on PCBs, making it suitable for high-density applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster data access and efficient performance for many applications.

Mixed Memory Type: FLASH+PSRAM

The combination of FLASH and PSRAM improves performance and flexibility for various computing tasks.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage of 1.8V enhances power efficiency, making it ideal for battery-operated devices.

Power Supplies (V): 1.8

Consistent power supply requirement promotes stability in device operation.

No. of Terminals: 88

A higher number of terminals allows for more connections and functionalities within the memory IC.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Thin profile and fine pitch packaging facilitate a compact design, perfect for portable electronics.

Maximum Operating Temperature: 85 °C

This IC can withstand high temperatures, ensuring reliable operation in demanding environments.

Organization: 8MX16

The specific organization offers efficient data handling, suitable for various applications.

Minimum Operating Temperature: -25 °C

Low-temperature tolerance ensures performance in a wide range of environmental conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and enhances the reliability of electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning helps in effective space management on circuit boards.

Maximum Seated Height: 1.2 mm

The low profile height allows for more compact assembly in devices with space constraints.

Width: 8 mm

A narrow width makes it suitable for dense PCB layouts where space is a premium.

Minimum Supply Voltage (Vsup): 1.7 V

Lower minimum supply voltage contributes to less energy consumption, enhancing battery life in devices.

Length: 10 mm

Compact length optimizes the board design, suitable for miniature electronic applications.

Technology: CMOS

CMOS technology allows for low power consumption and high-speed performance.

Terminal Form: BALL

Ball terminal formation facilitates reliable and easy mounting on PCBs for efficient operations.

Maximum Supply Current: 47 mA

The maximum supply current allows for robust performance while managing power efficiently.

No. of Words: 8388608 words

High word count ensures substantial data storage capability for various applications.

Memory Width: 16

A memory width of 16 bits enhances the amount of data processed per operation, improving overall performance.

Terminal Pitch: 0.8 mm

The tight terminal pitch makes it suitable for high-density applications without compromising circuit integrity.

No. of Words Code: 8M

The 8M words capacity defines its ample storage capability for complex applications.

Maximum Supply Voltage (Vsup): 1.95 V

This higher limit allows flexibility in voltage supply, accommodating a range of designs.

Memory Density: 134217728 bit

High memory density ensures that the IC can handle larger applications efficiently.

Memory IC Type: MEMORY CIRCUIT

This designation confirms its primary function and reliability in computing tasks.

Maximum Standby Current: 0.00007 Amp

Extremely low standby current reduces energy waste, making it an eco-friendly choice.

Technical Specifications

Other Function Memory ICs M36L0R7050T0ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 2M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7050T0ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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