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M36L0R7040B0ZAQT

STMicroelectronics

M36L0R7040B0ZAQT by STMicroelectronics

M36L0R7040B0ZAQT by STMicroelectronics is a mixed memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It supports asynchronous mode and has a max temp of 85 °C, ideal for compact applications in consumer electronics. Its thin profile and fine pitch design enhance space efficiency in modern devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,195 parts In-Stock

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3,195

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Anansix

USA . 1,365 parts In-Stock

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1,365

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Digiode

USA . 1,362 parts In-Stock

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1,362

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,728 parts In-Stock

1+ parts

$3.774

100+ parts

-

1k+ parts

$3.396

10k+ parts

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1,728

$3.774

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$3.396

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MKK Technologies

India . 2,335 parts In-Stock

1+ parts

$7.096

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2,335

$7.096

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DigiPath Technology Company

USA . 2,335 parts In-Stock

1+ parts

$7.096

100+ parts

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2,335

$7.096

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Corphita

USA . 3,348 parts In-Stock

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3,348

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Parana Technologies

USA . 1,588 parts In-Stock

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$4.512

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1,588

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$4.512

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Overview

Unlock the potential of your next project with the M36L0R7040B0ZAQT memory IC from STMicroelectronics. Renowned for their superior quality and innovation, STMicroelectronics delivers a robust blend of Flash and PSRAM technology that ensures efficient performance in diverse applications, from consumer electronics to industrial automation. Experience enhanced reliability, low power consumption, and exceptional data storage capabilities that elevate your designs above the rest!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliability and protection for the IC, making it suitable for various electronic applications.

Surface Mount: YES

The surface mount capability allows for efficient space-saving in PCB layouts, making it ideal for compact designs.

Package Shape: RECTANGULAR

The rectangular shape is versatile and commonly used, ensuring compatibility with a wide range of circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation improves performance by allowing faster access times, beneficial for high-speed applications.

Mixed Memory Type: FLASH+PSRAM

The combination of FLASH and PSRAM provides both non-volatile and volatile memory, offering flexibility for various data storage needs.

Nominal Supply Voltage / Vsup: 1.8 V

The low supply voltage minimizes power consumption, making it energy-efficient and ideal for battery-operated devices.

Power Supplies (V): 1.8 V

Operating at 1.8 V ensures compatibility with modern low-power electronics, helping designers adhere to energy efficiency standards.

No. of Terminals: 88

The high number of terminals facilitates extensive connectivity options, allowing for complex circuit integrations.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The fine pitch and thin profile are beneficial for high-density applications, enabling compact design and layout optimization.

Maximum Operating Temperature: 85 C

Operating at a high temperature threshold allows this IC to function reliably in demanding environmental conditions.

Organization: 8MX16

This specific organization offers efficient data structure, optimizing data retrieval and storage capabilities.

Minimum Operating Temperature: -25 C

The wide operating temperature range ensures reliable performance in a variety of ambient conditions and environments.

Terminal Finish: TIN LEAD

Tin lead finish provides excellent solderability, enhancing assembly processes and ensuring stable connections in electronics.

Terminal Position: BOTTOM

Bottom-terminal positioning aids in effective thermal management, which is critical for the reliability of high-performance applications.

Maximum Seated Height: 1.2 mm

The low profile enhances compatibility with various chassis and PCB designs, making it suitable for space-constrained applications.

Width: 8 mm

With a manageable width, this IC can fit into a variety of circuit configurations while ensuring effective layout management.

Minimum Supply Voltage (Vsup): 1.7 V

Allowing for a wider tolerance in supply voltage aids in stable operation under varying electrical conditions.

Length: 10 mm

The compact length supports high-density installations, helpful in designs where saving space is vital.

Technology: CMOS

CMOS technology enhances performance and low power consumption, crucial for modern energy-sensitive applications.

Terminal Form: BALL

Ball terminals facilitate reliable soldering processes, improving connection integrity and reducing the risk of mechanical failure.

Maximum Supply Current: 47 mA

Limiting the maximum supply current helps to maintain lower power consumption, crucial for energy-efficient designs.

No. of Words: 8388608 words

With over 8 million words, this IC provides substantial data storage capacity, suitable for a range of applications from simple to complex.

Memory Width: 16

A 16-bit memory width optimizes data handling capabilities, making it suitable for advanced applications that require higher data throughput.

Terminal Pitch: 0.8 mm

The finer terminal pitch allows for increased terminal density, maximizing connectivity in tighter PCB layouts.

No. of Words Code: 8M

The 8M words code signifies a robust memory system and capacity, supporting sophisticated processing demands.

Maximum Supply Voltage (Vsup): 1.95 V

The upper limit on supply voltage ensures flexibility in design while remaining within safe operating limits for best performance.

Memory Density: 134217728 bit

This high memory density allows for extensive data storage within a compact size, essential for modern applications requiring large memory footprints.

Memory IC Type: MEMORY CIRCUIT

Categorized as a memory circuit indicates its core functionality is data storage, affirming its application in electronics that require reliable data management.

Maximum Standby Current: 0.00007 Amp

The ultra-low standby current facilitates energy savings during idle periods, essential for battery-powered devices.

Technical Specifications

Other Function Memory ICs M36L0R7040B0ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7040B0ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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