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M36W216BI70ZA6

STMicroelectronics

M36W216BI70ZA6 by STMicroelectronics

M36W216BI70ZA6 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with FLASH+SRAM technology. It operates b/w -40 °C to 85 °C and requires a supply voltage of 2.7V to 3.3V. Ideal for industrial applications, it offers fast access times of 70ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,984 parts In-Stock

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4,984

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Vyrian

USA . 1,877 parts In-Stock

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1,877

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Anansix

USA . 964 parts In-Stock

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964

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,057 parts In-Stock

1+ parts

$2.980

100+ parts

-

1k+ parts

$2.682

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2,057

$2.980

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$2.682

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MKK Technologies

India . 1,334 parts In-Stock

1+ parts

$5.603

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1,334

$5.603

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DigiPath Technology Company

USA . 1,334 parts In-Stock

1+ parts

$5.603

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1,334

$5.603

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Parana Technologies

USA . 2,032 parts In-Stock

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$3.563

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2,032

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$3.563

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Corphita

USA . 509 parts In-Stock

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509

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Overview

Unlock exceptional performance with the M36W216BI70ZA6 from STMicroelectronics, a leader in innovative memory solutions. This powerful Flash+SRAM memory IC seamlessly combines reliability and efficiency, making it ideal for industrial applications that demand robust data storage under extreme conditions. Experience unmatched quality, lower power consumption, and versatile design options, ensuring your devices operate at peak performance while maximizing value and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for industrial applications.

Surface Mount: YES

Surface mount technology allows for reduced space requirement on PCBs and ease of assembly, which is ideal for compact designs.

Package Shape: RECTANGULAR

A rectangular package shape provides efficient use of board space and is commonly used in various electronic applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster access times and simplifies timing requirements, improving overall system performance.

Mixed Memory Type: FLASH+SRAM

Having both FLASH and SRAM types improves versatility, allowing for the storage of both non-volatile and volatile data.

Nominal Supply Voltage / Vsup: 3 V

A nominal supply voltage of 3V is compatible with a wide range of modern electronic devices, ensuring easy integration.

Power Supplies (V): 3

Having a single power supply requirement simplifies design and reduces potential points of failure.

No. of Terminals: 66

With 66 terminals, this IC can support more complex configurations and interconnections, allowing for greater flexibility in design.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style is designed for high-density applications, reducing footprint and enhancing performance in compact devices.

Maximum Operating Temperature: 85 °C

The ability to operate at temperatures up to 85 °C makes this IC suitable for demanding industrial environments.

Organization: 1MX16

The memory organization as 1MX16 allows for efficient data access and handling, optimizing performance in applications requiring large data storage.

Minimum Operating Temperature: -40 °C

Ability to function in extreme cold (-40 °C) ensures reliability in challenging environments, ideal for outdoor and industrial applications.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

This high-quality terminal finish enhances solderability and durability over time, ensuring reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates efficient space usage on PCB layouts and optimizes signal integrity.

Maximum Seated Height: 1.4 mm

A low seated height enables compact designs and better fitting in shallow mounting areas.

Width: 8 mm

The compact width allows for a space-efficient design, fitting into a variety of electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

A low minimum supply voltage permits operation in power-sensitive applications, ensuring energy efficiency.

Length: 12 mm

The length of 12 mm contributes to a compact footprint, promoting efficient use of precious board space.

Temperature Grade: INDUSTRIAL

Being rated for industrial temperature applications guarantees reliability and robustness in critical environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this IC efficient and reliable.

Terminal Form: BALL

Ball terminal form enhances the robustness of electrical connections, particularly in high-shock and vibration applications.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA supports power-efficient design, suitable for low-power applications.

No. of Words: 1048576 words

With 1,048,576 words, the memory capacity is significant for data-intensive applications, allowing extensive data storage.

Memory Width: 16

The 16-bit memory width enables efficient data handling and processing, enhancing overall system performance.

Terminal Pitch: 0.8 mm

The 0.8 mm pitch supports compact designs while allowing easy routing of signals on the PCB.

No. of Words Code: 1M

The memory capacity of 1M words indicates enough storage for diverse applications, ensuring versatility.

Maximum Supply Voltage (Vsup): 3.3 V

A maximum supply voltage of 3.3V allows compatibility with a wide range of modern electronics, enhancing application range.

Memory Density: 16777216 bit

With a memory density of 16 megabits, this IC accommodates large amounts of data, suitable for complex applications.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit type, it efficiently handles data storage and retrieval processes, crucial for performance-driven applications.

Maximum Standby Current: 0.00001 Amp

The extremely low maximum standby current ensures minimal power consumption during idle periods, enhancing device efficiency.

Maximum Access Time: 70 ns

A maximum access time of 70 ns enables fast data retrieval, improving overall system performance.

Technical Specifications

Other Function Memory ICs M36W216BI70ZA6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216BI70ZA6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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