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M36W108B120ZM5

STMicroelectronics

M36W108B120ZM5 by STMicroelectronics

M36W108B120ZM5 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 1M x 8 organization with mixed FLASH+SRAM technology. It operates b/w -20 °C to 85°C and supports power supplies of 2.7V to 3.6V. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,869 parts In-Stock

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4,869

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Digiode

USA . 814 parts In-Stock

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814

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Anansix

USA . 534 parts In-Stock

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534

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,197 parts In-Stock

1+ parts

$3.707

100+ parts

-

1k+ parts

$3.336

10k+ parts

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2,197

$3.707

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$3.336

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MKK Technologies

India . 30 parts In-Stock

1+ parts

$6.970

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30

$6.970

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DigiPath Technology Company

USA . 30 parts In-Stock

1+ parts

$6.970

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30

$6.970

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Corphita

USA . 3,511 parts In-Stock

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3,511

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Parana Technologies

USA . 1,691 parts In-Stock

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$4.432

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1,691

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$4.432

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Overview

Unlock unparalleled performance with the M36W108B120ZM5 from STMicroelectronics, a leader in innovative memory solutions. This advanced memory IC seamlessly combines FLASH and SRAM technologies, delivering exceptional speed and efficiency for applications in consumer electronics, automotive, and industrial devices. Experience superior reliability and low power consumption, empowering your designs with the quality that only STMicroelectronics can provide. Elevate your projects with cutting-edge memory excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and reliability, making it suitable for various environmental conditions.

Surface Mount: YES

Surface mount technology allows for a smaller size and better performance in high-density applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCB layouts, facilitating efficient circuit design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster access times and simplifies interface design for users.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM allows for both high-speed data access and non-volatile storage, enhancing versatility.

Power Supplies (V): 3/3.3

Compatible with standard voltage levels, this product can be easily integrated into existing systems.

No. of Terminals: 48

With a sufficient number of terminals, this IC can accommodate complex functionalities and increased connectivity.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The low-profile grid array package enhances performance due to reduced parasitic capacitance and inductance.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliability in demanding applications.

Organization: 1MX8

This organization provides efficient data structuring for optimal memory access and usage.

Minimum Operating Temperature: -20 °C

A wide operating temperature range ensures functionality in diverse environmental conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easier layout design and can help with thermal management.

Maximum Seated Height: 1.35 mm

The low seated height is ideal for space-constrained applications, contributing to overall design efficiency.

Width: 9.8 mm

A compact width allows for efficient space utilization on printed circuit boards.

Minimum Supply Voltage (Vsup): 2.7 V

A low minimum supply voltage helps in power-sensitive applications, allowing for energy-efficient designs.

Length: 11.8 mm

An optimal length aids in fitting the product in various designs without compromising performance.

Technology: CMOS

CMOS technology ensures lower power consumption and higher performance, making it a modern choice for memory applications.

Terminal Form: BALL

Ball terminals facilitate better thermal dissipation and mechanical stability in soldered connections.

Maximum Supply Current: 100 mA

The maximum supply current is suitable for a variety of applications, accommodating different power needs.

No. of Words: 1048576 words

Providing over a million words of memory enables the handling of large data sets, enhancing overall usability.

Memory Width: 8

An 8-bit memory width is optimal for a wide range of applications, balancing performance and complexity.

Terminal Pitch: 1 mm

A terminal pitch of 1 mm allows for dense packing on PCBs, making it advantageous for space-sensitive applications.

No. of Words Code: 1M

Having 1M words is ideal for storing substantial amounts of data, making it highly functional for various uses.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V offers flexibility in power supply choices while ensuring reliable performance.

Memory Density: 8388608 bit

High memory density provides vast storage in a compact footprint, which is crucial for modern electronic devices.

Memory IC Type: MEMORY CIRCUIT

Designed specifically as a memory circuit, this IC is tailored for optimal data storage and retrieval.

Maximum Standby Current: 0.00002 Amp

Minimizing standby current ensures energy efficiency, making it ideal for battery-operated devices.

Maximum Access Time: 120 ns

A maximum access time of 120 ns improves data retrieval speed, enhancing the overall performance of applications.

Technical Specifications

Other Function Memory ICs M36W108B120ZM5 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108B120ZM5 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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