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M36W108T100ZN6

STMicroelectronics

M36W108T100ZN6 by STMicroelectronics

M36W108T100ZN6 by STMicroelectronics is a versatile memory IC featuring 1M x 8 organization, operating in asynchronous mode. It supports a supply voltage range of 2.7V to 3.6V and operates within -40 °C to 85°C, making it ideal for industrial applications. Its thin profile and surface mount design enhance space efficiency in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,086 parts In-Stock

1+ parts

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2,086

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Vyrian

USA . 1,228 parts In-Stock

1+ parts

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1,228

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Digiode

USA . 399 parts In-Stock

1+ parts

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399

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,252 parts In-Stock

1+ parts

$4.179

100+ parts

-

1k+ parts

$3.761

10k+ parts

-

1,252

$4.179

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$3.761

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MKK Technologies

India . 1,737 parts In-Stock

1+ parts

$7.858

100+ parts

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1,737

$7.858

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DigiPath Technology Company

USA . 1,737 parts In-Stock

1+ parts

$7.858

100+ parts

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1,737

$7.858

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Corphita

USA . 938 parts In-Stock

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938

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Parana Technologies

USA . 104 parts In-Stock

1+ parts

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$4.996

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104

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$4.996

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Overview

Unlock unparalleled performance with the M36W108T100ZN6 from STMicroelectronics—your ideal solution for advanced applications in industrial, automotive, and consumer electronics. Combining cutting-edge FLASH and SRAM technologies, this high-quality memory IC ensures swift data access while maintaining energy efficiency. Trust in STMicroelectronics' legacy of innovation and reliability to elevate your projects, providing you with exceptional value and unmatched benefits. Choose quality; choose M36W108T100ZN6!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and cost-effectiveness in various applications.

Surface Mount: YES

Surface mount capability allows for efficient PCB design and space-saving in devices.

Package Shape: RECTANGULAR

The rectangular shape optimizes board layout and component placement.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances performance by allowing independent data access.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM offers high-speed processing with non-volatile memory storage.

Power Supplies (V): 3/3.3

Versatile power supply options provide compatibility with a range of devices.

No. of Terminals: 48

A higher number of terminals ensures greater functionality and ease of integration into systems.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The grid array and thin profile facilitate efficient thermal management and compact design.

Maximum Operating Temperature: 85 °C

High-temperature tolerance makes it suitable for industrial applications that require reliability.

Organization: 1MX8

The organization format allows for efficient data handling and storage.

Minimum Operating Temperature: -40 °C

Low-temperature operation ensures functionality in extreme environmental conditions.

Terminal Finish: TIN LEAD

Tin-lead finish enhances solderability and reliability during assembly.

Terminal Position: BOTTOM

Bottom terminal positioning is ideal for compact designs and helps maintain a low profile.

Maximum Seated Height: 1 mm

A low seated height allows integration into high-density applications.

Width: 9.8 mm

Compact width enables it to fit into limited spaces while maintaining functionality.

Minimum Supply Voltage (Vsup): 2.7 V

The lower minimum voltage requirement enhances compatibility with various power sources.

Length: 11.8 mm

Short length is advantageous for space-constrained designs, providing flexibility in layout.

Temperature Grade: INDUSTRIAL

An industrial temperature rating ensures reliability and performance in harsh conditions.

Technology: CMOS

CMOS technology offers low power consumption along with high-speed performance.

Terminal Form: BUTT

Butt terminals facilitate ease of connection and ensure a stable electrical contact.

Maximum Supply Current: 100 mA

A maximum supply current of 100 mA allows for robust performance under demanding conditions.

No. of Words: 1048576 words

A high word count enables significant data storage capability for applications.

Memory Width: 8

An 8-bit memory width balances speed and capacity, making it ideal for many applications.

Terminal Pitch: 1 mm

A 1 mm terminal pitch aids in high-density layouts while maintaining reliability.

No. of Words Code: 1M

1M word capacity allows for efficient data storage suited for various applications.

Maximum Supply Voltage (Vsup): 3.6 V

Support for a maximum voltage of 3.6 V provides flexibility in design and power management.

Memory Density: 8388608 bit

High memory density supports large data operations, enhancing system capabilities.

Memory IC Type: MEMORY CIRCUIT

Designed specifically as a memory circuit, it ensures reliable data retention and access.

Maximum Standby Current: 0.00002 Amp

Extremely low standby current promotes energy efficiency in battery-powered applications.

Maximum Access Time: 100 ns

A fast access time of 100 ns allows for quick data retrieval, improving overall performance.

Technical Specifications

Other Function Memory ICs M36W108T100ZN6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T100ZN6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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