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M36LLR8860B1ZAQE

STMicroelectronics

M36LLR8860B1ZAQE by STMicroelectronics

M36LLR8860B1ZAQE by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C, ideal for compact electronic applications. With an 88-terminal grid array design, it ensures efficient space utilization in advanced devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,396 parts In-Stock

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Digiode

USA . 3,560 parts In-Stock

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Anansix

USA . 280 parts In-Stock

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280

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,370 parts In-Stock

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$2.244

100+ parts

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$2.019

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2,370

$2.244

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$2.019

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MKK Technologies

India . 200 parts In-Stock

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$4.219

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$4.219

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DigiPath Technology Company

USA . 200 parts In-Stock

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$4.219

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200

$4.219

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Parana Technologies

USA . 2,237 parts In-Stock

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$2.683

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2,237

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$2.683

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Corphita

USA . 862 parts In-Stock

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862

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Overview

Unlock unparalleled performance with the M36LLR8860B1ZAQE from STMicroelectronics, a leader in innovative memory solutions. This advanced FLASH + PSRAM IC seamlessly combines reliability and efficiency, making it ideal for applications ranging from IoT devices to consumer electronics. With a compact low-profile design and outstanding thermal resilience, this memory IC ensures optimal functionality while reducing power consumption, delivering exceptional value for your projects. Experience the quality and performance that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection against environmental factors, making the IC reliable for various applications.

Surface Mount: YES

Surface mount technology allows for high-density assembly on circuit boards, saving space and enabling more compact designs.

Package Shape: RECTANGULAR

The rectangular shape optimizes layout on PCBs, facilitating efficient space utilization and integration into various systems.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances performance by allowing higher data transfer rates and improved timing accuracy.

Mixed Memory Type: FLASH+PSRAM

The combination of FLASH and PSRAM provides versatile memory solutions, balancing speed and storage capabilities.

Nominal Supply Voltage / Vsup (V): 1.8

The nominal supply voltage of 1.8V is energy-efficient, leading to lower power consumption while maintaining optimal performance.

No. of Terminals: 88

A higher number of terminals allows for greater connectivity and functionality within complex devices.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This style enables a low profile design, which is ideal for applications with strict height restrictions and ensures efficient thermal performance.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C ensures reliability in high-temperature environments, suitable for industrial applications.

Organization: 16MX16

The organization of 16M x 16 offers a well-structured memory architecture, providing efficient data access and storage capabilities.

Minimum Operating Temperature: -25 °C

The capability to operate down to -25 °C makes this IC suitable for use in challenging, cold environments.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish ensures excellent solderability and corrosion resistance, enhancing product longevity.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient thermal dissipation and makes the IC easier to mount on circuit boards.

Maximum Seated Height: 1.4 mm

A low seated height of 1.4 mm is beneficial for applications requiring compact designs, contributing to space savings.

Width: 8 mm

With a width of 8 mm, this IC fits well in tight spaces, making it versatile for numerous applications.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum supply voltage of 1.7V allows for stable operation over a broader range of conditions, enhancing flexibility.

Length: 10 mm

The length of 10 mm provides a compact footprint, appropriate for miniaturized designs while ensuring functionality.

Technology: CMOS

CMOS technology is known for low power consumption and high noise immunity, making this IC reliable for demanding applications.

Terminal Form: BALL

Ball terminals facilitate better connections and are suitable for automated assembly processes, improving production efficiency.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA indicates robust performance, enabling the IC to handle higher workloads efficiently.

No. of Words: 16777216 words

The capacity of 16,777,216 words provides ample storage for complex data requirements, ideal for advanced applications.

Memory Width: 16

A memory width of 16 bits enhances the data transfer rate, improving overall system performance.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for higher density packaging, essential for space-constrained designs.

No. of Words Code: 16M

Offering 16M words of addressable space shows significant memory capacity, perfect for complex processing tasks.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum voltage supply of 1.95V allows for stable high-performance operations without compromising safety.

Memory Density: 268435456 bit

A memory density of 268,435,456 bits ensures extensive storage capabilities, accommodating large datasets efficiently.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, this IC is designed for reliable, high-speed data processing, making it suitable for a wide range of applications.

Maximum Standby Current: 0.00011 Amp

The low maximum standby current indicates excellent power efficiency, making it suitable for battery-operated devices.

Technical Specifications

Other Function Memory ICs M36LLR8860B1ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860B1ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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