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LC331632M-10

Onsemi

LC331632M-10 by Onsemi

LC331632M-10 by Onsemi is a 32KX16 CMOS memory IC with 3-STATE output. It operates at a nominal voltage of 5V and has a memory density of 524288 bits. This small outline package is ideal for applications requiring common I/O type in commercial temperature grades.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,348 parts In-Stock

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Vyrian

USA . 2,102 parts In-Stock

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Problanco Electronics

Mexico . 7,786 parts In-Stock

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TANS Electronics

Latvia . 5,037 parts In-Stock

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SupplyDigital Components

Austria . 3,735 parts In-Stock

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Kulean Microsystems

USA . 1,001 parts In-Stock

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Corphita

USA . 825 parts In-Stock

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UHIMA Technologies

Türkiye . 603 parts In-Stock

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Corohmni

South Africa . 155 parts In-Stock

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Overview

Unlock the power of advanced memory solutions with the LC331632M-10 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers unmatched quality and reliability in every product. Designed for a wide range of applications, this small outline memory IC offers customers exceptional value and benefits. With 32KX16 organization and 3-STATE output characteristics, this versatile IC provides seamless performance in various electronic devices. Trust Onsemi to deliver cutting-edge technology and superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the memory IC, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability makes the installation process easier and more efficient, saving time during assembly.

Input/Output Type: COMMON

Common input/output type allows for compatibility with a wide range of systems and devices.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides stable and reliable performance.

No. of Terminals: 40

Having 40 terminals allows for versatile connections and integration into different circuit designs.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the memory IC energy-efficient and reliable.

Maximum Standby Current: 0.002 Amp

With a maximum standby current of 0.002 Amp, this memory IC is energy-efficient and helps conserve power when not in active use.

Technical Specifications

Other Function Memory ICs LC331632M-10 attributes and parameters. Explore more Other Function Memory ICs devices from Onsemi

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G40

Memory Density:

524288 bit

Memory Width:

16

No. of Terminals:

40

No. of Words:

32768 words

No. of Words Code:

32K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP40,.56

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

75 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

LC331632M-10 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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