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LC331632ML-10

Onsemi

LC331632ML-10 by Onsemi

LC331632ML-10 by Onsemi is a 32KX16 CMOS memory IC with 3-STATE output, suitable for commercial applications. It operates at a nominal voltage of 5V, has a memory density of 524288 bits, and offers a max access time of 100ns. Ideal for systems requiring fast data retrieval and storage in compact form factors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 2,084 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 6,796 parts In-Stock

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SupplyDigital Components

Austria . 5,921 parts In-Stock

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Problanco Electronics

Mexico . 5,641 parts In-Stock

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TANS Electronics

Latvia . 5,496 parts In-Stock

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Corphita

USA . 566 parts In-Stock

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Corohmni

South Africa . 381 parts In-Stock

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UHIMA Technologies

Türkiye . 262 parts In-Stock

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Overview

Upgrade your electronic devices with the LC331632ML-10 by Onsemi, a high-quality Other Function Memory IC that offers unparalleled performance and reliability. Manufactured by Onsemi, a leading name in the industry known for their cutting-edge technology and innovation, this memory IC is perfect for a wide range of applications. With a robust design and efficient operation, this product provides exceptional value to customers seeking superior quality and functionality. Experience the benefits of the LC331632ML-10 and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the memory IC, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage of 5V, making it compatible with many existing systems and components.

No. of Terminals: 40

With 40 terminals, this memory IC offers a high level of connectivity for interfacing with other devices.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures up to 70 °C, making it suitable for various operating environments.

Organization: 32KX16

Organized as 32K x 16, providing a large memory capacity and efficient data storage capabilities.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed performance, making it energy efficient.

Memory Width: 16

With a memory width of 16 bits, the memory IC can process data efficiently and handle larger chunks of information.

No. of Words Code: 32K

With 32K words, this memory IC offers a high memory density for storing a large amount of data.

Maximum Standby Current: 0.0001 Amp

Consumes minimal standby current of 0.0001 Amp, conserving power when not in active use.

Maximum Access Time: 100 ns

Provides fast access time of 100 nanoseconds, ensuring quick retrieval and processing of data.

Technical Specifications

Other Function Memory ICs LC331632ML-10 attributes and parameters. Explore more Other Function Memory ICs devices from Onsemi

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G40

Memory Density:

524288 bit

Memory Width:

16

No. of Terminals:

40

No. of Words:

32768 words

No. of Words Code:

32K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP40,.56

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.0001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

75 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

LC331632ML-10 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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