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SMJ2564-45FEM

Texas Instruments

SMJ2564-45FEM by Texas Instruments

The Texas Instruments SMJ2564-45FEM is an 8Kx8 memory IC with 65536 bit memory density. It features a max operating temperature of 125°C and min of -55°C, suitable for military-grade applications. With a package style of chip carrier and 32 terminals, it offers fast access time of 450 ns in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,046 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,046

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-

-

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Digiode

USA . 826 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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826

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,655 parts In-Stock

1+ parts

$4.593

100+ parts

-

1k+ parts

$5.055

10k+ parts

-

1,655

$4.593

-

$5.055

-

ChromeModa Solutions

Germany . 2,360 parts In-Stock

1+ parts

$5.161

100+ parts

$4.232

1k+ parts

-

10k+ parts

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2,360

$5.161

$4.232

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IDEA Electronic Components Group

UK . 225 parts In-Stock

1+ parts

$5.161

100+ parts

-

1k+ parts

$4.645

10k+ parts

-

225

$5.161

-

$4.645

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One Stop Electronics

USA . 1,270 parts In-Stock

1+ parts

$9.000

100+ parts

-

1k+ parts

-

10k+ parts

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1,270

$9.000

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-

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AZTECH Wire

Italy . 425 parts In-Stock

1+ parts

$10.594

100+ parts

-

1k+ parts

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10k+ parts

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425

$10.594

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Corphita

USA . 2,100 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,100

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-

-

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DigiPath Technology Company

USA . 1,134 parts In-Stock

1+ parts

-

100+ parts

$4.653

1k+ parts

-

10k+ parts

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1,134

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$4.653

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Overview

Elevate your projects with the SMJ2564-45FEM by Texas Instruments, a high-quality memory IC that offers exceptional performance and reliability. Designed with cutting-edge technology and manufactured by a trusted industry leader, this chip carrier package memory IC is perfect for a wide range of applications. With its military-grade temperature grade and common input/output type, customers can trust in the durability and versatility of this product. Upgrade your systems today with the value and benefits that the SMJ2564-45FEM provides.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides good thermal conductivity and high resistance to heat, making it suitable for military and high-temperature applications.

Surface Mount: YES

Surface mount design allows for easy and efficient PCB assembly, saving time and reducing manufacturing costs.

Screening Level: 38535Q/M;38534H;883B

Compliant with strict military screening requirements, ensuring high reliability and performance in harsh environments.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of PCB space and easy integration into existing designs.

Input/Output Type: COMMON

Common input/output type simplifies interface design and compatibility with other components.

No. of Terminals: 32

Ample number of terminals for connecting to other components and peripherals, increasing design flexibility.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers good protection for the IC and allows for easy handling and installation.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability in various temperature conditions, ideal for military and industrial applications.

Organization: 8KX8

Organized as 8KX8, providing a balance between memory capacity and speed for efficient data storage and retrieval.

Output Characteristics: 3-STATE

3-state output allows for high impedance when not in use, minimizing power consumption and interference.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures functionality in extreme cold environments, suitable for a wide range of applications.

Terminal Position: QUAD

Quad terminal position provides stable and secure connections, reducing the risk of signal loss or interference.

Temperature Grade: MILITARY

Military-grade temperature rating ensures reliability and performance under harsh conditions, meeting stringent quality standards.

Technology: MOS

MOS technology offers high speed and low power consumption, ideal for memory ICs requiring efficient operation.

Terminal Form: NO LEAD

No-lead terminal form provides easy and secure soldering connections, enhancing durability and reliability.

No. of Words: 8192 words

Capacity for storing 8192 words provides sufficient memory for various data storage and processing needs.

Memory Width: 8

Memory width of 8 bits allows for efficient data transfer and processing, enhancing overall system performance.

Terminal Pitch: 1.27 mm

Terminal pitch of 1.27mm enables easy integration and connection to the PCB, ensuring proper electrical contact and signal transmission.

No. of Words Code: 8K

8K words code allows for easy identification and compatibility with other components, simplifying system integration.

Memory Density: 65536 bit

High memory density of 65536 bits provides ample storage capacity for data-intensive applications, offering efficient data management.

Maximum Access Time: 450 ns

Fast maximum access time of 450ns allows for quick data retrieval and processing, enhancing system performance and responsiveness.

Technical Specifications

Other Function Memory ICs SMJ2564-45FEM attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XQCC-N32

Memory Density:

65536 bit

Memory Width:

8

No. of Terminals:

32

No. of Words:

8192 words

No. of Words Code:

8K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC32,.45X.55

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

SMJ2564-45FEM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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