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SMJ27L08-45JM

Texas Instruments

SMJ27L08-45JM by Texas Instruments

The Texas Instruments SMJ27L08-45JM is a 1Kx8 OTP ROM memory IC with 3-STATE output. It operates in temperatures ranging from -55°C to 125°C, making it suitable for military-grade applications. With a memory density of 8192 bits and max access time of 450ns, it offers reliable performance in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,415 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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7,415

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-

-

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Digiode

USA . 4,086 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,086

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,022 parts In-Stock

1+ parts

$2.963

100+ parts

-

1k+ parts

$3.464

10k+ parts

-

2,022

$2.963

-

$3.464

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DigiPath Technology Company

USA . 720 parts In-Stock

1+ parts

$3.262

100+ parts

$3.001

1k+ parts

-

10k+ parts

-

720

$3.262

$3.001

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ChromeModa Solutions

Germany . 4,451 parts In-Stock

1+ parts

$3.329

100+ parts

$2.730

1k+ parts

-

10k+ parts

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4,451

$3.329

$2.730

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IDEA Electronic Components Group

UK . 903 parts In-Stock

1+ parts

$3.329

100+ parts

-

1k+ parts

$2.996

10k+ parts

-

903

$3.329

-

$2.996

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One Stop Electronics

USA . 464 parts In-Stock

1+ parts

$10.000

100+ parts

-

1k+ parts

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10k+ parts

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464

$10.000

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AZTECH Wire

Italy . 451 parts In-Stock

1+ parts

$19.803

100+ parts

-

1k+ parts

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451

$19.803

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Corphita

USA . 4,866 parts In-Stock

1+ parts

-

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4,866

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Overview

Unlock the power of cutting-edge technology with the SMJ27L08-45JM by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments delivers top-quality products that exceed industry standards. This versatile memory IC is perfect for a wide range of applications, offering customers unmatched value and performance. Experience faster processing speeds and increased reliability with this innovative product. Upgrade your systems today with the SMJ27L08-45JM and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal conductivity, ensuring reliable performance even in high temperature environments.

Screening Level: 38535Q/M;38534H;883B

High screening levels ensure quality and reliability, making this product suitable for demanding applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of PCB space and easy integration into electronic systems.

No. of Terminals: 24

Sufficient terminals for connecting to other components, offering flexibility and compatibility in circuit designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions without compromising performance.

Organization: 1KX8

Organized as 1Kx8, this memory IC provides a capacity of 1024 words with a memory width of 8, suitable for various data storage applications.

Output Characteristics: 3-STATE

3-STATE output allows for tristate logic control, enabling efficient sharing of bus lines and reducing power consumption.

Technology: MOS

MOS technology offers high speed, low power consumption, and excellent noise immunity, making this product ideal for efficient data processing.

Memory Density: 8192 bit

With a memory density of 8192 bit, this OTP ROM provides ample storage capacity for program data and instructions.

Maximum Access Time: 450 ns

Fast access time of 450 ns ensures quick retrieval of data, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs SMJ27L08-45JM attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SMJ27L08-45JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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