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M36W108B100ZN6

STMicroelectronics

M36W108B100ZN6 by STMicroelectronics

M36W108B100ZN6 from STMicroelectronics is a mixed memory IC featuring 1M x 8 organization with Flash+SRAM technology. It operates asynchronously at supply voltages of 2.7V to 3.6V and supports industrial applications with a max temp of 85 °C. Its compact design (11.8mm x 9.8mm) ensures efficient space utilization in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,235 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,235

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-

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Digiode

USA . 2,128 parts In-Stock

1+ parts

-

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-

1k+ parts

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2,128

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Anansix

USA . 1,833 parts In-Stock

1+ parts

-

100+ parts

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1,833

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,459 parts In-Stock

1+ parts

$5.065

100+ parts

-

1k+ parts

$4.558

10k+ parts

-

1,459

$5.065

-

$4.558

-

MKK Technologies

India . 631 parts In-Stock

1+ parts

$9.524

100+ parts

-

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10k+ parts

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631

$9.524

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DigiPath Technology Company

USA . 631 parts In-Stock

1+ parts

$9.524

100+ parts

-

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-

10k+ parts

-

631

$9.524

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-

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Parana Technologies

USA . 1,815 parts In-Stock

1+ parts

-

100+ parts

$6.056

1k+ parts

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10k+ parts

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1,815

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$6.056

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Corphita

USA . 1,507 parts In-Stock

1+ parts

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1,507

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Overview

Unlock unparalleled performance with the M36W108B100ZN6 from STMicroelectronics, a leader in innovation and reliability. This advanced memory IC combines Flash and SRAM in a compact, robust package, perfect for diverse applications like industrial automation and consumer electronics. Experience superior efficiency, reduced power consumption, and exceptional operational temperatures, ensuring your projects meet the highest quality standards while maximizing value. Your success is just a chip away!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures the memory IC is robust and can withstand various environmental conditions.

Surface Mount: YES

Surface mount technology allows for efficient use of space on printed circuit boards and simplifies the assembly process.

Package Shape: RECTANGULAR

The rectangular shape is designed for optimal layout and positioning on PCB, facilitating easier integration into compact designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation offers quicker data access without the need for synchronous clock signals, enhancing performance in certain applications.

Mixed Memory Type: FLASH+SRAM

Combining Flash and SRAM provides both non-volatile memory storage and fast access speeds, catering to diverse application needs.

Power Supplies (V): 3/3.3

Compatible with both 3V and 3.3V power supplies makes this IC versatile for various electronic designs.

No. of Terminals: 48

A higher number of terminals allows for more connections, improving the integration capacity within complex circuits.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The very thin profile of the grid array package is ideal for space-constrained applications, ensuring a low form factor.

Maximum Operating Temperature: 85 °C

Able to operate at elevated temperatures, this IC is suitable for industrial applications where heat dissipation is a concern.

Organization: 1MX8

This organization format allows efficient data handling and supports a broad range of applications.

Minimum Operating Temperature: -40 °C

This memory IC is rated for extreme low temperatures, making it suitable for harsh environmental conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides excellent solderability and mechanical strength, contributing to reliable connections.

Terminal Position: BOTTOM

Bottom terminals facilitate easier access during soldering and reduce the overall footprint on the PCB.

Maximum Seated Height: 1 mm

With a maximum seated height of 1 mm, it supports designs where height restrictions are present.

Width: 9.8 mm

This compact width enables the IC to fit into smaller PCB layouts without compromising performance.

Minimum Supply Voltage (Vsup): 2.7 V

Able to operate at a low supply voltage, enhancing energy efficiency and making it ideal for battery-powered devices.

Length: 11.8 mm

The 11.8 mm length allows for dense packing of multiple components while maintaining system reliability.

Temperature Grade: INDUSTRIAL

Industrial grade components ensure longevity and reliability in demanding environments, increasing the product's lifecycle.

Technology: CMOS

CMOS technology provides low power consumption and high efficiency, crucial for modern electronic applications.

Terminal Form: BUTT

Butt terminal form ensures stable connections and enhances mechanical strength in the design.

Maximum Supply Current: 100 mA

The moderate supply current allows for optimized power consumption in various applications, extending battery life.

No. of Words: 1048576 words

With 1M words capacity, it offers ample storage for various applications that require substantial data handling.

Memory Width: 8

The 8-bit memory width provides sufficient data bus width for efficient data transfer rates in several applications.

Terminal Pitch: 1 mm

The 1 mm terminal pitch promotes compatibility with a wide range of PCBs and simplifies design layouts.

No. of Words Code: 1M

1M words coding enhances the memory's addressing capability, allowing more extensive data storage.

Maximum Supply Voltage (Vsup): 3.6 V

Handling up to 3.6 V enables compatibility with a broader range of systems and voltage levels.

Memory Density: 8388608 bit

The high memory density supports memory-intensive applications, providing the necessary space for large data storage.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, it’s designed specifically for efficient data storage, making it suitable for a wide range of devices.

Maximum Standby Current: 0.00002 Amp

Very low standby current contributes to energy efficiency, particularly advantageous for battery-operated devices.

Maximum Access Time: 100 ns

Fast access time of 100 ns improves overall system performance, ensuring rapid data retrieval and processing.

Technical Specifications

Other Function Memory ICs M36W108B100ZN6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108B100ZN6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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