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SAA4955TJ

NXP Semiconductors

SAA4955TJ by NXP Semiconductors

SAA4955TJ by NXP Semiconductors is a memory circuit IC with 245772x12 organization and 2949264 bit memory density. It operates synchronously at a nominal voltage of 3.3V and has a max access time of 21ns. This IC is commonly used in applications requiring small outline package style and commercial temperature grade.

Median Price

$6.444

Lifecycle Status

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16

In-Stock Inventory

1k+

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Freelance Electronics

USA . 170 parts In-Stock

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$2.808

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$2.949

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$2.780

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$2.808

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Bristol Electronics

USA . 50 parts In-Stock

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$10.080

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$4.704

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Rebound Electronics

UK . 1,052 parts In-Stock

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Digiode

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Anansix

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Vyrian

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ComSIT Distribution GmbH

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Q Components

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LIBRA Elektronik GmbH

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Fibra_Brandt Electronic GMBH

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J2 Sourcing AB

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Holdelec - ElecDif-Pro

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Component Electronics Inc.

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Corohmni

South Africa . 357 parts In-Stock

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$2.212

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Aztec Data Supply Inc.

USA . 12,266 parts In-Stock

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$5.641

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AZTECH Wire

Italy . 801 parts In-Stock

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Ampacity Inc.

Singapore . 1,060 parts In-Stock

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One Stop Electronics

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Argo Parts USA

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Kepictronics

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Cyclops Electronics Ltd (Excess)

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Aranea Global

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Assy Fe

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Overview

Experience the unparalleled quality and performance of the SAA4955TJ by NXP Semiconductors. As a trusted manufacturer in the industry, NXP Semiconductors is known for delivering cutting-edge solutions that meet and exceed customer expectations. The SAA4955TJ falls under the category of Other Function Memory ICs, making it versatile for a wide range of applications. With its synchronous operating mode and high memory density of 2949264 bits, this product offers exceptional value to customers. Its small outline package style and dual terminal position make it easy to integrate into various designs. Discover the advantages and benefits of the SAA4955TJ and unlock new possibilities for your projects.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - The use of plastic/epoxy as the package body material provides durability and protection for the memory IC, making it suitable for various applications.

Surface Mount:

YES - Being surface mountable allows for easy and efficient integration onto PCBs, saving valuable space in electronic devices.

No. of Functions:

1 - This memory IC offers a single function, simplifying circuit design and reducing complexity.

Package Shape:

RECTANGULAR - The rectangular package shape enables straightforward placement and mounting of the memory IC onto PCBs, ensuring compatibility with standard manufacturing processes.

Operating Mode:

SYNCHRONOUS - The synchronous operation mode offers high-speed data transfer capabilities, improving overall system performance.

Nominal Supply Voltage / Vsup (V):

3.3 - The nominal supply voltage of 3.3V ensures efficient and reliable operation of the memory IC within specified power requirements.

Power Supplies (V):

3.3 - Power supply at 3.3V allows for compatibility with a wide range of devices and electronic systems.

No. of Terminals:

40 - With 40 terminals, this memory IC offers ample connectivity options for seamless integration into circuits.

Package Style (Meter):

SMALL OUTLINE - The small outline package style makes this memory IC suitable for space-constrained applications while maintaining excellent performance.

Maximum Operating Temperature:

70 °C - With a maximum operating temperature of 70°C, this memory IC can reliably function in various environmental conditions.

Organization:

245772X12 - The organization of 245772x12 provides ample memory capacity for storing and retrieving data efficiently.

Minimum Operating Temperature:

0 °C - The memory IC can operate at low temperatures down to 0°C, increasing its versatility in different environments.

Terminal Finish:

TIN - The terminal finish of tin ensures excellent solderability and robust electrical connections for long-term reliability.

Terminal Position:

DUAL - The dual terminal position offers flexibility for easy PCB mounting and facilitates efficient signal routing.

Minimum Supply Voltage (Vsup):

3V - With a minimum supply voltage of 3V, the memory IC can operate reliably even at lower power levels.

Temperature Grade:

COMMERCIAL - This memory IC is suitable for commercial-grade applications, ensuring stable performance and reliability.

Technology:

CMOS - Utilizing CMOS technology enables low power consumption, high noise immunity, and efficient data processing.

Terminal Form:

J BEND - The J bend terminal form simplifies the handling and soldering process, enhancing the usability and ease of manufacturing.

Maximum Supply Current:

70 mA - With a maximum supply current of 70 mA, the memory IC operates within specified power limits, ensuring optimal performance.

No. of Words:

245772 words - With 245772 words of memory, this IC offers a significant storage capacity for storing vast amounts of data.

Memory Width:

12 - The memory width of 12 enables efficient data transfer and processing, supporting a wide range of applications.

Terminal Pitch:

1.27 mm - The terminal pitch of 1.27 mm allows for precise and secure connection to PCBs, ensuring reliable electrical performance.

No. of Words Code:

245772 - The code of 245772 specifies the specific configuration and organization of the memory, catering to various system requirements.

Maximum Supply Voltage (Vsup):

3.6 V - The maximum supply voltage of 3.6V ensures the memory IC can handle higher power requirements without sacrificing performance.

Memory Density:

2949264 bit - With a memory density of 2949264 bits, this IC can store a large amount of data, making it suitable for data-intensive applications.

Memory IC Type:

MEMORY CIRCUIT - As a memory circuit IC, it provides efficient storage and retrieval of data, contributing to the smooth functioning of electronic devices.

Maximum Standby Current:

0.01 Amp - With a maximum standby current of 0.01 Amp, this IC offers power-saving capabilities, prolonging battery life in portable devices.

Maximum Access Time:

21 ns - The maximum access time of 21 ns ensures fast and responsive data retrieval, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs SAA4955TJ attributes and parameters. Explore more Other Function Memory ICs devices from NXP Semiconductors

Specs

Maximum Access Time:

21 ns

Additional Features:

IT ALSO REQUIRES 3 TO 5.5V SUPPLY

JESD-30 Code:

R-PDSO-J40

JESD-609 Code:

e3

Memory Density:

2949264 bit

Memory IC Type:

Memory Width:

12

No. of Functions:

1

No. of Terminals:

40

No. of Words:

245772 words

No. of Words Code:

245772

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

245772X12

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ40,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

SAA4955TJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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