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M36LLR8860D1ZAQE

STMicroelectronics

M36LLR8860D1ZAQE by STMicroelectronics

M36LLR8860D1ZAQE by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM. It operates at 1.8V with a max temp of 85 °C and includes 88 terminals in a compact grid array package. Ideal for high-performance applications requiring efficient data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,087 parts In-Stock

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4,087

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Digiode

USA . 3,576 parts In-Stock

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3,576

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Anansix

USA . 1,229 parts In-Stock

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1,229

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,245 parts In-Stock

1+ parts

$4.458

100+ parts

-

1k+ parts

$4.012

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1,245

$4.458

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$4.012

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MKK Technologies

India . 156 parts In-Stock

1+ parts

$8.384

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156

$8.384

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DigiPath Technology Company

USA . 156 parts In-Stock

1+ parts

$8.384

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156

$8.384

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Corphita

USA . 755 parts In-Stock

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755

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Parana Technologies

USA . 281 parts In-Stock

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$5.331

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281

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$5.331

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Overview

Unlock the future of memory solutions with the M36LLR8860D1ZAQE from STMicroelectronics. Renowned for their innovation and reliability, STMicroelectronics crafted this dual FLASH+PSRAM solution to enhance performance in demanding applications like IoT devices and automotive systems. With low power consumption, compact design, and robust thermal stability, this memory IC delivers exceptional efficiency and longevity—making it an ideal choice for cutting-edge technology projects. Experience quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making the product reliable in various applications.

Surface Mount: YES

Surface mount technology allows for a smaller footprint on PCBs, enabling more compact designs and efficient space utilization.

Package Shape: RECTANGULAR

The rectangular shape is ideal for a variety of applications, ensuring compatibility with standard mounting requirements.

Operating Mode: SYNCHRONOUS

Synchronous operation improves performance by allowing data operations to be coordinated, enhancing speed and efficiency.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM types offers flexibility and efficiency in data storing and accessing, making the product versatile for various applications.

Nominal Supply Voltage / Vsup (V): 1.8

A low nominal supply voltage of 1.8V minimizes power consumption, which is crucial for battery-operated devices.

Power Supplies (V): 1.8

This low power supply requirement is advantageous for energy-efficient designs, extending battery life in portable devices.

No. of Terminals: 88

Having 88 terminals allows for a high degree of connectivity options, supporting complex circuit designs.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile and fine pitch design of the grid array helps in achieving high-density applications and efficient thermal performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this IC is suitable for high-temperature environments and applications.

Organization: 16MX16

The 16Mx16 organization provides a balanced structure for data storage, making this memory IC suitable for a variety of applications.

Minimum Operating Temperature: -25 °C

A minimum operating temperature of -25 °C ensures reliable performance in cold environments.

Terminal Finish: TIN SILVER COPPER

This combination offers excellent conductivity and solderability, ensuring reliable connections and longevity of the component.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient soldering in a compact design, ideal for modern electronics.

Maximum Seated Height: 1.4 mm

The low seated height enhances the compatibility with thin profile applications, allowing for more compact systems.

Width: 8 mm

A width of 8 mm makes it suitable for various compact industrial and consumer electronic applications.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum supply voltage of 1.7V ensures functionality in low power applications while maintaining performance.

Length: 10 mm

The compact length of 10 mm promotes space-saving designs in PCB layout.

Technology: CMOS

CMOS technology provides low power consumption while ensuring high-speed operations, making this IC ideal for modern electronic applications.

Terminal Form: BALL

Ball terminal form offers enhanced reliability and performance in mounting, especially in high-density configurations.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA strikes a good balance between performance and power efficiency in various applications.

No. of Words: 16777216 words

With 16,777,216 words available, this memory IC provides ample storage capacity for data-intensive applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data handling and processing, suitable for various digital applications.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm facilitates compact design while maintaining sufficient spacing for soldering and connectivity.

No. of Words Code: 16M

With a code indicating 16M words, this memory IC ensures significant storage capability for diverse applications.

Maximum Supply Voltage (Vsup): 1.95 V

This higher boundary for supply voltage allows for versatility in design while ensuring reliability under different load conditions.

Memory Density: 268435456 bit

With a memory density of 268,435,456 bits, this IC offers robust storage solutions for data-heavy applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is optimized for efficient data storage and retrieval, making it a vital component in modern electronics.

Maximum Standby Current: 0.00011 Amp

A low maximum standby current of 0.00011 Amps enhances energy efficiency, making this memory IC ideal for battery-powered devices and reducing overall power consumption.

Technical Specifications

Other Function Memory ICs M36LLR8860D1ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860D1ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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