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M36W216T85ZA1T

STMicroelectronics

M36W216T85ZA1T by STMicroelectronics

M36W216T85ZA1T from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal voltage. It features a 16-bit width and operates within -40 °C to 70 °C. Ideal for compact applications, it offers high density with 16M bits in a 66-terminal grid array package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,976 parts In-Stock

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3,976

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Digiode

USA . 1,094 parts In-Stock

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1,094

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Anansix

USA . 461 parts In-Stock

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461

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 347 parts In-Stock

1+ parts

$4.695

100+ parts

-

1k+ parts

$4.225

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347

$4.695

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$4.225

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MKK Technologies

India . 2,293 parts In-Stock

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$8.828

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2,293

$8.828

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DigiPath Technology Company

USA . 2,293 parts In-Stock

1+ parts

$8.828

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2,293

$8.828

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Corphita

USA . 4,899 parts In-Stock

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4,899

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Parana Technologies

USA . 2,257 parts In-Stock

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$5.613

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2,257

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$5.613

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Overview

Unlock unparalleled performance with the M36W216T85ZA1T from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality memory IC offers exceptional reliability for applications ranging from consumer electronics to industrial automation. With its low profile and efficient design, it ensures seamless integration and optimal functionality. Experience enhanced data management and efficiency, making your projects more effective and future-ready!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good durability and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

Being surface mount technology allows for a compact design and easy integration into modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape is optimal for space-efficient layouts on PCBs, maximizing design flexibility.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances the speed and efficiency, allowing for faster data access in various applications.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V contributes to lower power consumption, making it energy-efficient for battery-operated devices.

No. of Terminals: 66

With 66 terminals, this IC can support a wide range of functionalities, ensuring versatility in designs.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile and fine pitch of the grid array style facilitate efficient heat dissipation and dense mounting on the PCB.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability in various operating environments, making it suitable for commercial and industrial applications.

Organization: 1MX16

The memory organization of 1MX16 offers a good balance of data density and access speed for efficient memory solutions.

Minimum Operating Temperature: 0 °C

Operational capability starting from 0 °C makes it viable for a broader range of environments, including room temperature applications.

Terminal Position: BOTTOM

Bottom terminal positioning allows for improved routing on the PCB, facilitating compact design.

Maximum Seated Height: 1.4 mm

A low seated height helps save space on the PCB, promoting thinner device designs.

Width: 8 mm

An 8 mm width contributes to versatile design layouts, allowing for efficient use of PCB space.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage of 2.7V provides flexibility in power supply options for various electronic devices.

Length: 12 mm

A length of 12 mm provides a compact footprint, making it suitable for space-constrained designs.

Temperature Grade: COMMERCIAL

Commercial-grade temperature specifications enhance reliability for consumer electronics and general applications.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, critical for high-performance memory applications.

Terminal Form: BALL

Ball terminal form allows for easier soldering and improved electrical connections on the PCB, enhancing performance.

No. of Words: 1048576 words

The capability to store 1,048,576 words allows for substantial data handling, suitable for various applications.

Memory Width: 16

With a memory width of 16 bits, this IC can handle larger data transfers, enhancing overall performance.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for a compact layout while maintaining reliability in soldering and electrical connections.

No. of Words Code: 1M

The 1M word code ensures compatibility with a wide range of applications requiring significant memory capacity.

Maximum Supply Voltage (Vsup): 3.3 V

The maximum supply voltage of 3.3V provides a balance between performance and power efficiency, vital for modern electronics.

Memory Density: 16777216 bit

A density of 16,777,216 bits allows for extensive data storage, making it ideal for advanced memory applications.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, this IC is essential for data storage in embedded systems, consumer electronics, and high-performance computing.

Technical Specifications

Other Function Memory ICs M36W216T85ZA1T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 16 SRAM

JESD-30 Code:

R-PBGA-B66

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216T85ZA1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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