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M36W108B100ZN5T

STMicroelectronics

M36W108B100ZN5T by STMicroelectronics

M36W108B100ZN5T by STMicroelectronics is a 1MX8 memory IC with 1048576 words and 8388608 bit memory density. Operating in asynchronous mode, it has a supply voltage range of 2.7V to 3.6V and temperature range from -20 °C to 85°C. This rectangular package with grid array style is suitable for various applications requiring high-density memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,278 parts In-Stock

1+ parts

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4,278

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Digiode

USA . 3,456 parts In-Stock

1+ parts

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100+ parts

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3,456

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Anansix

USA . 1,521 parts In-Stock

1+ parts

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100+ parts

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1,521

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 353 parts In-Stock

1+ parts

$3.384

100+ parts

-

1k+ parts

$3.045

10k+ parts

-

353

$3.384

-

$3.045

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MKK Technologies

India . 1,695 parts In-Stock

1+ parts

$6.363

100+ parts

-

1k+ parts

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10k+ parts

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1,695

$6.363

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DigiPath Technology Company

USA . 1,695 parts In-Stock

1+ parts

$6.363

100+ parts

-

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10k+ parts

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1,695

$6.363

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Corphita

USA . 2,938 parts In-Stock

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2,938

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Parana Technologies

USA . 2,304 parts In-Stock

1+ parts

-

100+ parts

$4.046

1k+ parts

-

10k+ parts

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2,304

-

$4.046

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Overview

Elevate your electronic devices with the M36W108B100ZN5T by STMicroelectronics, a cutting-edge Memory Circuit IC designed for optimum performance and reliability. Crafted by the renowned manufacturer STMicroelectronics, this product boasts top-notch quality and durability. Ideal for a wide range of applications, this Memory Circuit IC offers unmatched value, benefits, and advantages to customers seeking seamless operation and efficiency. Upgrade your technology with the M36W108B100ZN5T and experience unparalleled performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are durable and reliable, ensuring the product will last long and withstand wear and tear.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in data transfer and processing, making the product versatile and adaptable.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can perform efficiently even in harsh environmental conditions.

Organization: 1MX8

The 1MX8 organization offers a high memory capacity and data organization capability, suitable for handling large amounts of data efficiently.

Technology: CMOS

CMOS technology enables low power consumption and high speed operation, making the product energy-efficient and fast.

Memory Density: 8388608 bit

With a high memory density, the product can store a large amount of data in a compact space, maximizing storage efficiency.

Technical Specifications

Other Function Memory ICs M36W108B100ZN5T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108B100ZN5T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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