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M36L0R7040B0ZAQ

STMicroelectronics

M36L0R7040B0ZAQ by STMicroelectronics

M36L0R7040B0ZAQ by STMicroelectronics is a mixed memory IC featuring 8M x 16 organization and operates asynchronously. It supports a supply voltage range of 1.7V to 1.95V, with a max temp of 85 °C, ideal for compact applications in consumer electronics. Its thin profile and surface mount design enhance space efficiency in modern devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,466 parts In-Stock

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3,466

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Digiode

USA . 2,239 parts In-Stock

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2,239

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Anansix

USA . 2,142 parts In-Stock

1+ parts

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2,142

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 448 parts In-Stock

1+ parts

$2.543

100+ parts

-

1k+ parts

$2.289

10k+ parts

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448

$2.543

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$2.289

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MKK Technologies

India . 1,961 parts In-Stock

1+ parts

$4.782

100+ parts

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1,961

$4.782

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DigiPath Technology Company

USA . 1,961 parts In-Stock

1+ parts

$4.782

100+ parts

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1,961

$4.782

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Corphita

USA . 4,646 parts In-Stock

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4,646

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Parana Technologies

USA . 1,240 parts In-Stock

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100+ parts

$3.040

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1,240

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$3.040

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Overview

Unlock a world of possibilities with the M36L0R7040B0ZAQ from STMicroelectronics, a leader in innovative memory solutions. This advanced memory IC combines FLASH and PSRAM technology, providing reliable performance for diverse applications, from IoT devices to consumer electronics. With its low power consumption and robust construction, it ensures longevity and efficiency, giving your projects the competitive edge they need. Elevate your designs with STMicroelectronics’ trusted quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection, making the IC suitable for various applications.

Surface Mount: YES

Surface mount design allows for efficient use of PCB space and enables automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy integration into circuit designs and optimizes board layout.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for greater flexibility in timing, improving overall system performance.

Mixed Memory Type: FLASH+PSRAM

Combining Flash and PSRAM provides versatile memory capabilities, supporting various application requirements.

Nominal Supply Voltage / Vsup: 1.8 V

A nominal supply voltage of 1.8 V ensures low power consumption, making the IC suitable for battery-operated devices.

No. of Terminals: 88

With 88 terminals, the IC can support complex connections, allowing for more functionality within the design.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch grid array style enhance thermal performance and signal integrity.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C ensures the IC can function reliably in a range of environmental conditions.

Organization: 8MX16

The 8Mx16 organization provides a good balance of memory size and data width, optimizing data handling efficiency.

Minimum Operating Temperature: -25 °C

Operating down to -25 °C increases the usability of the IC in varied applications, including automotive and industrial.

Terminal Finish: TIN LEAD

Tin lead finish ensures reliable solderability and compatibility with various PCB manufacturing processes.

Terminal Position: BOTTOM

Bottom terminal position allows for efficient heat dissipation and saves board space for other components.

Maximum Seated Height: 1.2 mm

A low seated height helps in achieving compact designs, ideal for space-constrained applications.

Width: 8 mm

A width of 8 mm makes it suitable for integration into small electronic devices and tight layouts.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum supply voltage of 1.7 V enhances compatibility with a wide range of power supply circuits.

Length: 10 mm

At 10 mm in length, this IC provides a good balance between size and functionality for modern electronics.

Technology: CMOS

Using CMOS technology allows for low power consumption and high-speed operation, perfect for modern applications.

Terminal Form: BALL

Ball terminal form enhances connectivity and reliability in surface mounting applications.

Maximum Supply Current: 47 mA

A max supply current of 47 mA allows for adequate performance without overwhelming power resources.

No. of Words: 8388608 words

Providing 8388608 words of memory allows for substantial data storage capabilities in numerous applications.

Memory Width: 16

A memory width of 16 provides efficient data processing and compatibility with common data buses.

Terminal Pitch: 0.8 mm

With a terminal pitch of 0.8 mm, the IC can be integrated into high-density designs without sacrificing performance.

No. of Words Code: 8M

The 8M word code indicates a significant data capacity, making it excellent for memory-intensive applications.

Maximum Supply Voltage (Vsup): 1.95 V

Robust tolerance for supply voltage variations (up to 1.95 V) ensures stable operation in varying power conditions.

Memory Density: 134217728 bit

A memory density of 134217728 bits ensures ample data storage for a wide range of applications.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, this IC is specifically designed for high performance in data storage applications.

Maximum Standby Current: 0.00007 Amp

Extremely low standby current enhances energy efficiency, making it ideal for low-power and battery-operated devices.

Technical Specifications

Other Function Memory ICs M36L0R7040B0ZAQ attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7040B0ZAQ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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