Loading...

M36P0R9060E0ZACE

STMicroelectronics

M36P0R9060E0ZACE by STMicroelectronics

M36P0R9060E0ZACE by STMicroelectronics is a synchronous memory IC featuring a mixed FLASH+PSRAM type with 32M words and a density of 536.87 Mb. It operates at a nominal voltage of 1.8V, supporting temperatures from -30 °C to 85 °C. Ideal for compact applications, it comes in a thin-profile grid array package with 107 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,966 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,966

-

-

-

-

Digiode

USA . 2,671 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,671

-

-

-

-

Anansix

USA . 1,698 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,698

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,785 parts In-Stock

1+ parts

$5.073

100+ parts

-

1k+ parts

$4.566

10k+ parts

-

1,785

$5.073

-

$4.566

-

MKK Technologies

India . 1,088 parts In-Stock

1+ parts

$9.539

100+ parts

-

1k+ parts

-

10k+ parts

-

1,088

$9.539

-

-

-

DigiPath Technology Company

USA . 1,088 parts In-Stock

1+ parts

$9.539

100+ parts

-

1k+ parts

-

10k+ parts

-

1,088

$9.539

-

-

-

Corphita

USA . 4,981 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,981

-

-

-

-

Parana Technologies

USA . 1,472 parts In-Stock

1+ parts

-

100+ parts

$6.065

1k+ parts

-

10k+ parts

-

1,472

-

$6.065

-

-

Overview

Elevate your projects with the M36P0R9060E0ZACE from STMicroelectronics—where innovation meets reliability. This advanced memory IC seamlessly integrates FLASH and PSRAM, ensuring high performance in compact designs. With a robust temperature range and superior quality assurance from a leading manufacturer, it’s perfect for diverse applications—from consumer electronics to automotive systems. Experience enhanced efficiency and power savings while achieving exceptional speed and responsiveness. Unlock your design's full potential!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material contributes to the reliability and overall performance of the memory IC, making it suitable for a variety of applications.

Surface Mount: YES

The surface mount capability allows for high-density PCB designs, optimizing space while enhancing performance in compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into various circuit designs, facilitating efficient thermal management.

Operating Mode: SYNCHRONOUS

Synchronous operation improves speed and performance, making this memory IC ideal for applications requiring fast access and processing.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM provides flexibility for a wide range of applications, enabling high data storage and quick access for dynamic operations.

Nominal Supply Voltage / Vsup: 1.8

The low nominal supply voltage aids in power efficiency, making this product suitable for battery-operated and low-power devices.

Power Supplies (V): 1.8

A consistent power supply requirement ensures stable performance, making the IC reliable for long-term usage in various applications.

No. of Terminals: 107

Having multiple terminals allows for enhanced connectivity options, providing greater flexibility in circuit design.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch reduce PCB space requirements and enable better heat dissipation, making it suitable for modern, compact electronics.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can function effectively in demanding environments, boosting its application range.

Organization: 32MX16

This organization structure allows for efficient data management and quick access, making it a versatile choice for various memory-intensive applications.

Minimum Operating Temperature: -30 °C

The extended temperature range enables this memory IC to operate safely in harsh conditions, making it ideal for outdoor and industrial uses.

Terminal Position: BOTTOM

Bottom terminal positioning simplifies PCB layout and integration, contributing to a streamlined design process.

Maximum Seated Height: 1.2 mm

The compact seated height allows for efficient use of space, which is essential in modern electronic device design.

Width: 8 mm

A width of 8 mm provides a balance between size and performance, making it versatile for various applications.

Minimum Supply Voltage (Vsup): 1.7 V

The low minimum supply voltage enhances operational flexibility in various environments, contributing to power savings.

Maximum Time At Peak Reflow Temperature (s): 40

A maximum reflow time of 40 seconds ensures compatibility with standard soldering processes, facilitating easier manufacturing.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures robustness during manufacturing processes, promoting long-term reliability.

Length: 11 mm

The length is optimized for compact designs, allowing for efficient use of space in tight layouts.

Technology: CMOS

The use of CMOS technology enhances power efficiency and performance, making it a great choice for modern electronic devices.

Terminal Form: BALL

Ball terminal configuration improves solderability and connectivity, making assembly processes more straightforward.

No. of Words: 33554432 words

With a high word count, this memory IC supports significant data storage, suitable for a wide range of complex applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing, enhancing the speed of data manipulation.

Terminal Pitch: 0.8 mm

A fine terminal pitch allows for compact designs, maximizing space on the PCB and improving overall layout efficiency.

No. of Words Code: 32M

The 32M words code provides substantial memory capacity, making it ideal for applications with demanding memory requirements.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage allowance ensures compatibility with a variety of power supply systems, enhancing flexibility in usage.

Memory Density: 536870912 bit

High memory density enables the storage of vast amounts of data in a compact package, making it suitable for advanced applications.

Memory IC Type: MEMORY CIRCUIT

This classification ensures the component is designed specifically for memory applications, ensuring optimized performance.

Maximum Access Time: 70 ns

A maximum access time of 70 ns allows for quick data retrieval, enhancing the overall system performance.

Technical Specifications

Other Function Memory ICs M36P0R9060E0ZACE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B107

Length:

11 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

107

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA107,9X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Width:

8 mm

Trade Compliance

M36P0R9060E0ZACE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20