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M36W108T120ZM1

STMicroelectronics

M36W108T120ZM1 by STMicroelectronics

M36W108T120ZM1 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 8Mbit density with FLASH+SRAM technology. It operates at 3/3.3V and supports a max access time of 120ns, ideal for embedded applications. Its compact design ensures efficient space utilization in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,724 parts In-Stock

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2,724

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Digiode

USA . 2,319 parts In-Stock

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2,319

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Vyrian

USA . 665 parts In-Stock

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665

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 88 parts In-Stock

1+ parts

$3.361

100+ parts

-

1k+ parts

$3.025

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88

$3.361

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$3.025

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MKK Technologies

India . 716 parts In-Stock

1+ parts

$6.320

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716

$6.320

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DigiPath Technology Company

USA . 716 parts In-Stock

1+ parts

$6.320

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716

$6.320

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Corphita

USA . 1,742 parts In-Stock

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1,742

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Parana Technologies

USA . 688 parts In-Stock

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$4.018

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688

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$4.018

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Overview

Unlock exceptional performance with the M36W108T120ZM1 from STMicroelectronics! This innovative memory solution combines Flash and SRAM technologies, perfect for a wide range of applications—from consumer electronics to industrial automation. With STMicroelectronics' renowned quality and reliability, this product ensures efficiency and durability while operating seamlessly in diverse environments. Enhance your designs with the unrivaled speed and low power consumption that drive success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and protection against environmental factors, making this product reliable in various applications.

Surface Mount: YES

Surface mount technology allows for a compact design, saving space on the PCB and facilitating easier automated assembly.

Package Shape: RECTANGULAR

The rectangular shape helps in optimal layout and placement on the circuit board, enhancing performance and integration.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for better timing flexibility in applications, making it suitable for various circuit configurations.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM in a single memory component provides versatility, enabling fast data access and persistent storage.

Power Supplies (V): 3/3.3

Operating at 3V or 3.3V makes this memory IC compatible with a variety of platforms while maintaining power efficiency.

No. of Terminals: 48

With 48 terminals, the IC allows for sufficient connectivity options, enabling complex configurations and designs.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The low profile grid array design optimizes space usage while maintaining electrical performance, making it perfect for compact devices.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures stable operation in warmer environments, enhancing reliability.

Organization: 1MX8

The organization of 1M x 8 data bits provides an excellent balance of storage density and accessibility for a wide range of applications.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, this memory IC can safely operate in standard environmental conditions without performance issues.

Terminal Finish: TIN LEAD

The tin-lead terminal finish enhances solderability and reliability of connections, ensuring long-term performance in assembled products.

Terminal Position: BOTTOM

Bottom-terminal positioning promotes efficient use of PCB layout and optimizes signal integrity.

Maximum Seated Height: 1.35 mm

Its low seated height helps minimize overall device thickness, allowing for design in thinner applications.

Width: 9.8 mm

The compact width of 9.8 mm aids in fitting the IC in tightly designed electronic layouts.

Minimum Supply Voltage (Vsup): 2.7 V

A minimum supply voltage of 2.7V provides flexibility in power supply design and enhances compatibility with battery-operated devices.

Length: 11.8 mm

The length of 11.8 mm ensures appropriate sizing for integration into most PCB designs without significant spatial compromise.

Temperature Grade: COMMERCIAL

A commercial temperature grade signifies robustness for general-purpose applications, ensuring reliability for consumer electronics.

Technology: CMOS

CMOS technology offers low power consumption while maintaining high speed, making this memory IC efficient in performance and energy use.

Terminal Form: BALL

Ball-form terminals allow for efficient thermal management and better high-frequency performance in electronic applications.

Maximum Supply Current: 100 mA

A high supply current capability of 100 mA ensures that the IC can handle demanding data rates and maintain performance under load.

No. of Words: 1048576 words

With 1,048,576 words of storage, this IC provides substantial memory capacity suitable for varied applications including multimedia and data logging.

Memory Width: 8

An 8-bit memory width supports efficient data processing and matches well with common data bus architectures.

Terminal Pitch: 1 mm

A terminal pitch of 1 mm allows for a compact design, facilitating denser layouts while maintaining solder joint integrity.

No. of Words Code: 1M

With a coding of 1M words, this IC can effectively cater to applications that require substantial memory space for optimal performance.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V allows for flexibility in voltage supply designs while ensuring stability under operation.

Memory Density: 8388608 bit

With a memory density of 8,388,608 bits, it supports large applications while maintaining a compact footprint.

Memory IC Type: MEMORY CIRCUIT

This classification as a memory circuit highlights its crucial role in data storage solutions across various electronic applications.

Maximum Standby Current: 0.00002 Amp

Very low standby current maximizes energy efficiency, making this IC ideal for battery-operated devices.

Maximum Access Time: 120 ns

A maximum access time of 120 ns ensures that the memory IC meets the speed requirements of high-performance applications.

Technical Specifications

Other Function Memory ICs M36W108T120ZM1 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T120ZM1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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