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M36P0R9060E0ZACF

STMicroelectronics

M36P0R9060E0ZACF by STMicroelectronics

M36P0R9060E0ZACF from STMicroelectronics is a synchronous memory IC featuring a mixed FLASH+PSRAM configuration with 32M words and a max access time of 70 ns. It operates at a nominal voltage of 1.8V, suitable for compact applications. Its thin profile and grid array design make it ideal for space-constrained devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 19,000 parts In-Stock

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Digiode

USA . 4,616 parts In-Stock

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Vyrian

USA . 3,049 parts In-Stock

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Anansix

USA . 2,644 parts In-Stock

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IDEA Electronic Components Group

UK . 2,147 parts In-Stock

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$1.867

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$1.680

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$1.680

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MKK Technologies

India . 1,717 parts In-Stock

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$3.510

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$3.510

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DigiPath Technology Company

USA . 1,717 parts In-Stock

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$3.510

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1,717

$3.510

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Andel Nordic

Denmark . 5,959 parts In-Stock

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$9.975

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$9.576

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$9.576

5,959

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$9.576

Kepictronics

USA . 8,000 parts In-Stock

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Corphita

USA . 2,627 parts In-Stock

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Parana Technologies

USA . 1,956 parts In-Stock

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Overview

Unlock the power of innovation with the M36P0R9060E0ZACF from STMicroelectronics, a leader in high-quality semiconductor solutions. This advanced memory IC blends flash and PSRAM for unparalleled performance and efficiency in various applications, from mobile devices to IoT systems. With its compact design and robust operating range, it ensures reliability where you need it most. Choose STMicroelectronics for cutting-edge technology that drives your projects forward with unmatched value and dependability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy offers excellent protection and durability, making this memory IC suitable for a wide range of applications.

Surface Mount: YES

Being a surface mount component allows for easier integration into modern electronic circuits, reducing board space and enabling more compact designs.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on the PCB and facilitates efficient layout for various applications.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer rates and reliability, making it ideal for high-performance memory applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM provides versatility, allowing for both fast access and non-volatile storage, catering to diverse application needs.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V is energy-efficient, reducing power consumption in battery-powered devices.

Power Supplies (V): 1.8

Designed to operate with a 1.8V power supply, this IC is well-suited for low-power applications, extending battery life.

No. of Terminals: 107

With 107 terminals, it offers extensive connectivity options, enabling complex interfaces in advanced applications.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch of the grid array package improve space efficiency and allow for high-density circuit designs.

Maximum Operating Temperature: 85 °C

Operating at up to 85 °C ensures reliable performance in moderately high temperature environments, suitable for industrial applications.

Organization: 32MX16

The organization of 32MX16 provides a good balance of capacity and access speed, making it an effective choice for various memory needs.

Minimum Operating Temperature: -30 °C

A minimum operating temperature of -30 °C makes this IC ideal for applications in harsh environmental conditions.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient thermal dissipation and helps improve performance in confined spaces.

Maximum Seated Height: 1.2 mm

The low seated height of 1.2 mm is advantageous for space-critical applications, allowing for thinner device profiles.

Width: 8 mm

An 8 mm width provides a compact form factor, suitable for various miniaturized electronic devices.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum supply voltage of 1.7 V offers flexibility in power supply design, enabling compatibility with various power sources.

Maximum Time At Peak Reflow Temperature (s): 40

A maximum peak reflow time of 40 seconds ensures compatibility with standard soldering processes, simplifying manufacturing.

Peak Reflow Temperature (°C): 260

With a peak reflow temperature of 260 °C, this IC can withstand high-temperature assembly processes, ensuring manufacturing robustness.

Length: 11 mm

The compact 11 mm length ensures this memory IC fits into a variety of designs, maintaining miniaturization without compromising performance.

Technology: CMOS

Utilizing CMOS technology enhances power efficiency and speed, making this IC suitable for modern electronic applications.

Terminal Form: BALL

Ball terminal form facilitates efficient soldering and enhances the performance of the connection, improving reliability.

No. of Words: 33554432 words

A capacity of 33,554,432 words translates to ample storage for demanding applications, supporting complex data processing.

Memory Width: 16

A memory width of 16 bits allows for optimal data bus utilization, improving overall data throughput.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch supports higher density layouts, ideal for compact electronic designs requiring minimal space.

No. of Words Code: 32M

The 32M words coding signifies the high memory capacity, making this IC suitable for complex applications needing significant data storage.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95 V supports high-performance modes while maintaining energy efficiency.

Memory Density: 536870912 bit

A memory density of 536,870,912 bits makes this IC highly capable, suitable for applications that require large data storage.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, this IC is specially designed for efficient data storage and retrieval, essential for modern electronics.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, this IC ensures quick data retrieval speeds, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs M36P0R9060E0ZACF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B107

Length:

11 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

107

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA107,9X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Width:

8 mm

Trade Compliance

M36P0R9060E0ZACF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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