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M36LLR8760B1ZAQE

STMicroelectronics

M36LLR8760B1ZAQE by STMicroelectronics

M36LLR8760B1ZAQE by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C, ideal for compact applications. With 88 terminals in a fine-pitch grid array, it ensures efficient performance in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,922 parts In-Stock

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Anansix

USA . 1,443 parts In-Stock

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Vyrian

USA . 705 parts In-Stock

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IDEA Electronic Components Group

UK . 225 parts In-Stock

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$3.873

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$3.486

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225

$3.873

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MKK Technologies

India . 1,772 parts In-Stock

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$7.283

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DigiPath Technology Company

USA . 1,772 parts In-Stock

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$7.283

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1,772

$7.283

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Corphita

USA . 4,977 parts In-Stock

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4,977

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Parana Technologies

USA . 506 parts In-Stock

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$4.631

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$4.631

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Overview

Unlock unparalleled performance with the M36LLR8760B1ZAQE from STMicroelectronics, a leader in innovative memory solutions. This cutting-edge mixed memory IC seamlessly combines FLASH and PSRAM technology, ideal for demanding applications in consumer electronics, IoT devices, and automotive systems. Experience enhanced reliability, efficiency, and compact design that empowers your projects while ensuring optimal power consumption. Elevate your designs with STMicroelectronics—where quality meets innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for efficient space usage on PCBs and simplifies the manufacturing process.

Package Shape: RECTANGULAR

A rectangular package shape is a standard form factor that facilitates easier integration into existing designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible timing as it doesn't require a clock signal, enhancing performance in varied applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM in one IC provides a versatile solution for data storage and access speed, ideal for complex applications.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V ensures compatibility with modern low-power devices while aiding in energy efficiency.

Power Supplies (V): 1.8

Operating on a single power supply of 1.8V simplifies design and reduces the need for multiple voltage regulators.

No. of Terminals: 88

With 88 terminals, this IC offers numerous connections for enhanced functionality and integration in complex systems.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low-profile fine pitch design saves space on the PCB and enables high-density packaging, suitable for compact devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this memory IC can function reliably in harsh environments.

Organization: 16MX16

The memory organization of 16M x 16 provides an adequate array size for a variety of applications, achieving a balance between performance and capacity.

Minimum Operating Temperature: -25 °C

The capability to operate at low temperatures makes this IC suitable for automotive and outdoor applications.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish ensures excellent solderability and long-term reliability in various environmental conditions.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easier assembly and allows for better thermal management in electronic devices.

Maximum Seated Height: 1.4 mm

A low seated height reduces the overall profile of the device, making it ideal for space-constrained applications.

Width: 8 mm

An 8 mm width allows for a compact design that can fit a variety of device layouts.

Minimum Supply Voltage (Vsup): 1.7 V

The ability to operate at a minimum supply voltage of 1.7V supports low-power applications and extends battery life.

Length: 10 mm

The length of 10 mm complements the compact design, making the IC suitable for space-sensitive applications.

Technology: CMOS

CMOS technology ensures low power consumption while providing high performance, ideal for battery-operated devices.

Terminal Form: BALL

Ball terminal form enhances reliability and allows for better connection stability on the PCB.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA ensures robust performance for demanding applications while maintaining energy efficiency.

No. of Words: 16777216 words

Offering 16,777,216 words provides sufficient capacity for data-intensive applications, enhancing performance and usability.

Memory Width: 16

A memory width of 16 bits strikes a balance between speed and efficiency, catering to a wide range of applications.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch supports high-density designs while ensuring reliability in soldering and connection.

No. of Words Code: 16M

The 16M word code indicates substantial storage capacity, meeting the demands of modern applications.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V provides flexibility in power supply design, accommodating various operational requirements.

Memory Density: 268435456 bit

A density of 268,435,456 bits allows for extensive data storage, making it suitable for memory-intensive applications.

Memory IC Type: MEMORY CIRCUIT

Being a dedicated memory circuit makes it a focused solution for data storage needs, enhancing reliability and performance.

Maximum Standby Current: 0.00011 Amp

A maximum standby current of 0.00011 Amp indicates efficient power management, contributing to longer battery life for portable devices.

Technical Specifications

Other Function Memory ICs M36LLR8760B1ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8760B1ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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