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TMS2716-45JL

Texas Instruments

TMS2716-45JL by Texas Instruments

TMS2716-45JL by Texas Instruments is a 2KX8 memory IC with 16384-bit density and 450 ns access time. It features 3-STATE output characteristics, suitable for commercial applications. Housed in a ceramic rectangular package with 24 terminals, it operates b/w 0 to 70°C, making it ideal for various electronic devices.

Median Price

$3.874

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$3.874

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$3.874

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Digiode

USA . 2,315 parts In-Stock

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2,315

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Vyrian

USA . 2,056 parts In-Stock

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2,056

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Fibra_Brandt Electronic GMBH

Germany . 40 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 22 parts In-Stock

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22

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,436 parts In-Stock

1+ parts

$2.253

100+ parts

-

1k+ parts

$2.755

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1,436

$2.253

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$2.755

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DigiPath Technology Company

USA . 2,198 parts In-Stock

1+ parts

$2.481

100+ parts

$2.283

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2,198

$2.481

$2.283

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ChromeModa Solutions

Germany . 3,408 parts In-Stock

1+ parts

$2.532

100+ parts

$2.076

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3,408

$2.532

$2.076

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IDEA Electronic Components Group

UK . 2,301 parts In-Stock

1+ parts

$2.532

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$2.279

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2,301

$2.532

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$2.279

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AZTECH Wire

Italy . 746 parts In-Stock

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$15.788

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746

$15.788

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One Stop Electronics

USA . 878 parts In-Stock

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$20.000

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Corphita

USA . 482 parts In-Stock

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482

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Overview

Elevate your electronic projects with the TMS2716-45JL by Texas Instruments, a high-quality memory IC that offers exceptional performance and reliability. Manufactured by industry leader Texas Instruments, this versatile component is perfect for a wide range of applications in various industries. With its 3-STATE output characteristics and 2KX8 organization, the TMS2716-45JL delivers fast access times and efficient data storage. Trust in Texas Instruments for cutting-edge technology and superior products that exceed expectations. Choose the TMS2716-45JL for unbeatable value and unmatched performance in your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal and mechanical properties, making the memory IC durable and reliable.

No. of Terminals: 24

Having a higher number of terminals allows for more connectivity options and flexibility in circuit designs.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this memory IC can withstand demanding environmental conditions.

Organization: 2KX8

The organization of 2KX8 means that the memory is organized as 2 kilobits by 8 bits, providing a good balance between storage capacity and data access speed.

Output Characteristics: 3-STATE

The 3-state output allows the memory IC to effectively drive bus lines and reduces power consumption when the output is not needed.

Technology: MOS

MOS technology offers high speed performance and low power consumption, making this memory IC efficient for various applications.

Memory Density: 16384 bit

The high memory density of 16384 bits allows for storing a large amount of data in a compact space.

Maximum Access Time: 450 ns

With a fast maximum access time of 450 nanoseconds, this memory IC can quickly retrieve data when needed.

Technical Specifications

Other Function Memory ICs TMS2716-45JL attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

16384 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2716-45JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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