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M36W216TI70ZA6T

STMicroelectronics

M36W216TI70ZA6T by STMicroelectronics

M36W216TI70ZA6T from STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 16Mbit density and operates at 3V. It supports industrial applications with a max temp of 85 °C and offers fast access times of 70ns. Ideal for embedded systems requiring reliable FLASH+SRAM storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,792 parts In-Stock

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4,792

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Vyrian

USA . 2,334 parts In-Stock

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2,334

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Anansix

USA . 155 parts In-Stock

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155

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,994 parts In-Stock

1+ parts

$2.030

100+ parts

-

1k+ parts

$1.827

10k+ parts

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1,994

$2.030

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$1.827

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MKK Technologies

India . 2,212 parts In-Stock

1+ parts

$3.818

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2,212

$3.818

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DigiPath Technology Company

USA . 2,212 parts In-Stock

1+ parts

$3.818

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2,212

$3.818

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Corphita

USA . 1,980 parts In-Stock

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1,980

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Parana Technologies

USA . 1,183 parts In-Stock

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$2.428

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1,183

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$2.428

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Overview

Unlock exceptional performance and reliability with the M36W216TI70ZA6T from STMicroelectronics, a leader in innovative memory solutions. This premium FLASH+SRAM mixed memory IC is designed for demanding applications, boasting low power consumption and robust temperature resilience. Ideal for industrial settings, it ensures swift access times and stability, empowering your designs with unmatched efficiency and longevity. Elevate your projects with this trusted memory solution!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures long-term reliability and protection against environmental factors.

Surface Mount: YES

Supports modern manufacturing processes, allowing for smaller and more efficient designs.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs, facilitating integration into various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster access times and improves performance in applications requiring rapid data retrieval.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM provides versatility, allowing for both persistent and fast-access memory in a single chip.

Nominal Supply Voltage / Vsup: 3 V

Operating at a nominal voltage of 3V helps in achieving low power consumption, ideal for battery-operated devices.

Power Supplies (V): 3

Utilizing a standard power supply simplifies design and integration into existing systems.

No. of Terminals: 66

A higher number of terminals allows for more connections, increasing the chip's versatility and functionality.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low-profile grid array design facilitates compact layouts, making it suitable for space-constrained applications.

Maximum Operating Temperature: 85 °C

The ability to operate at high temperatures enhances reliability in industrial environments.

Organization: 1MX16

This organization allows for efficient data storage and retrieval, providing flexibility for various applications.

Minimum Operating Temperature: -40 °C

Operational range down to -40 °C ensures functionality in extreme environmental conditions.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Quality terminal finishes ensure excellent conductivity and reduce the risk of corrosion over time.

Terminal Position: BOTTOM

Bottom terminal positioning enables excellent electrical performance and efficient thermal management.

Maximum Seated Height: 1.4 mm

The low seated height is advantageous for space-saving designs in modern electronic systems.

Width: 8 mm

A compact width allows for flexible PCB layouts and helps meet space constraints in various applications.

Minimum Supply Voltage (Vsup): 2.7 V

Allows for operation in low-voltage systems, enhancing compatibility with a broad range of devices.

Length: 12 mm

The length is designed to accommodate a variety of applications while maintaining compact dimensions.

Temperature Grade: INDUSTRIAL

Industrial-grade components ensure reliability and longevity in demanding applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and high density, making it highly efficient.

Terminal Form: BALL

Ball terminal form provides superior mechanical stability and improves solder reliability.

Maximum Supply Current: 20 mA

A low maximum supply current ensures energy efficiency, making it suitable for power-sensitive designs.

No. of Words: 1048576 words

A large word count allows for substantial data storage, catering to memory-intensive applications.

Memory Width: 16

A 16-bit memory width supports efficient data handling, improving overall performance.

Terminal Pitch: 0.8 mm

The fine pitch enables high-density designs, allowing for more components in a smaller area.

No. of Words Code: 1M

Offering 1 million words provides ample storage capabilities for a wide range of applications.

Maximum Supply Voltage (Vsup): 3.3 V

This allows compatibility with a range of digital systems and enhances device flexibility.

Memory Density: 16777216 bit

High memory density ensures that larger amounts of data can be stored efficiently within a compact form factor.

Memory IC Type: MEMORY CIRCUIT

Designed specifically as a memory circuit, it is optimized for data storage and retrieval applications.

Maximum Standby Current: 0.00001 Amp

Extremely low standby current results in excellent energy efficiency, prolonging battery life in portable devices.

Maximum Access Time: 70 ns

Fast access time enhances performance in read/write operations, critical for high-speed applications.

Technical Specifications

Other Function Memory ICs M36W216TI70ZA6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216TI70ZA6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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