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M36LLR8760M1ZAQ

STMicroelectronics

M36LLR8760M1ZAQ by STMicroelectronics

M36LLR8760M1ZAQ by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M x 16 organization with mixed FLASH+PSRAM technology. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,583 parts In-Stock

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Anansix

USA . 2,288 parts In-Stock

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2,288

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Digiode

USA . 364 parts In-Stock

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364

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IDEA Electronic Components Group

UK . 909 parts In-Stock

1+ parts

$3.071

100+ parts

-

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$2.764

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909

$3.071

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$2.764

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MKK Technologies

India . 146 parts In-Stock

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$5.775

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146

$5.775

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DigiPath Technology Company

USA . 146 parts In-Stock

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$5.775

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146

$5.775

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Corphita

USA . 2,685 parts In-Stock

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Parana Technologies

USA . 785 parts In-Stock

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$3.672

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785

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$3.672

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Overview

Unlock unparalleled performance with the M36LLR8760M1ZAQ from STMicroelectronics, a leader in innovative semiconductor solutions. This versatile memory IC seamlessly combines Flash and PSRAM technologies, offering exceptional efficiency and reliability for diverse applications—from IoT devices to automotive systems. With its compact design and low power consumption, it enhances your project's value, ensuring top-tier quality and durability that you can trust. Maximize your potential today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making the IC reliable for various applications.

Surface Mount: YES

The surface mount capability allows for compact device design and integration into modern PCB layouts, facilitating space-saving designs.

Package Shape: RECTANGULAR

A rectangular package shape simplifies layout configurations, optimizing space on circuit boards.

Operating Mode: ASYNCHRONOUS

The asynchronous mode allows for simpler system designs as it does not require clock signals for operation, enhancing versatility.

Mixed Memory Type: FLASH+PSRAM

The combination of FLASH and PSRAM memory types enables efficient data handling, supporting both high-speed access and non-volatile storage.

Nominal Supply Voltage / Vsup: 1.8V

A nominal supply voltage of 1.8V is ideal for low-power applications, reducing overall energy consumption and extending battery life in portable devices.

Power Supplies (V): 1.8

Operating on 1.8V makes this IC compatible with low-power systems, minimizing power dissipation and heat generation.

No. of Terminals: 88

With 88 terminals, this IC offers extensive connectivity options, enabling integration with a variety of peripherals and features.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array style provides a low profile while ensuring high pin density, which is beneficial for compact circuit designs.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C permits use in high-temperature environments, suitable for industrial and automotive applications.

Organization: 16MX16

An organization of 16MX16 allows for substantial data storage in a structured format, supporting complex applications.

Minimum Operating Temperature: -25 °C

With a minimum operating temperature of -25 °C, this IC is suited for use in harsh environments, providing flexibility across applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish ensures good solderability and reliability, making it easier to mount on circuit boards.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient heat dissipation and better electrical performance in compact designs.

Maximum Seated Height: 1.4 mm

A maximum seated height of 1.4 mm contributes to the low-profile design of the IC, making it compatible with space-constrained applications.

Width: 8 mm

An 8 mm width fits well into various PCB layouts, allowing for flexible design options across multiple applications.

Minimum Supply Voltage (Vsup): 1.7V

Supporting a minimum supply voltage of 1.7V enhances operational flexibility across varying power supply conditions.

Length: 10 mm

At 10 mm in length, the IC suits diverse applications while maintaining an optimal balance between performance and compactness.

Technology: CMOS

Utilizing CMOS technology allows for low-power consumption and faster operation, making this IC highly efficient.

Terminal Form: BALL

Ball terminal form provides better connectivity and is advantageous for high-density packaging and reliability.

Maximum Supply Current: 52 mA

With a maximum supply current of 52 mA, this IC can handle high data throughput while maintaining efficient power consumption.

No. of Words: 16777216 words

Storing 16,777,216 words results in substantial data capacity, supporting complex applications requiring significant memory.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing and transmission, enhancing overall performance.

Terminal Pitch: 0.8 mm

With a terminal pitch of 0.8 mm, this IC maintains compatibility with modern high-density packaging practices.

No. of Words Code: 16M

Having a word code of 16M indicates substantial addressable storage, making it ideal for applications requiring large memory capacity.

Maximum Supply Voltage (Vsup): 1.95V

A maximum supply voltage of 1.95V supports robust operation while preventing damage under standard voltage conditions.

Memory Density: 268435456 bit

A memory density of 268,435,456 bits underscores its capability to support large-scale applications and extensive data needs.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, it plays a critical role in data storage and retrieval, which is essential for modern computing applications.

Maximum Standby Current: 0.00011 Amp

An extremely low maximum standby current of 0.00011 Amp enhances energy efficiency, making this IC suitable for battery-powered devices.

Technical Specifications

Other Function Memory ICs M36LLR8760M1ZAQ attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8760M1ZAQ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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