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MTFC16GLTAM-WT

Micron Technology

MTFC16GLTAM-WT by Micron Technology

MTFC16GLTAM-WT by Micron Technology is a memory IC with 137TB density, operating at -25 to 85°C. It has 153 terminals in a square package shape for surface mounting. Ideal for applications requiring high memory capacity and reliable performance in various temperature conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 24,300 parts In-Stock

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24,300

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Digiode

USA . 2,353 parts In-Stock

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2,353

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Vyrian

USA . 489 parts In-Stock

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489

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Andel Nordic

Denmark . 2,605 parts In-Stock

1+ parts

$2.011

100+ parts

-

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$1.930

10k+ parts

$1.930

2,605

$2.011

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$1.930

$1.930

Aztec Data Supply Inc.

USA . 383 parts In-Stock

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$2.215

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383

$2.215

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Corohmni

South Africa . 364 parts In-Stock

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$5.784

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364

$5.784

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Ampacity Inc.

Singapore . 1,305 parts In-Stock

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$12.000

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1,305

$12.000

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AZTECH Wire

Italy . 440 parts In-Stock

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$12.839

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440

$12.839

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A-Z Elektronik GmbH

Germany . 5,375 parts In-Stock

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5,375

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Argo Parts USA

USA . 4,362 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 1,993 parts In-Stock

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1,993

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Microchip USA

USA . 296 parts In-Stock

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296

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Continental Prestige Electronics

USA . 129 parts In-Stock

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129

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Overview

Experience the cutting-edge performance and reliability of the MTFC16GLTAM-WT by Micron Technology. As a leader in memory technology, Micron delivers unparalleled quality and innovation in every product. This Other Function Memory IC is versatile and ideal for a wide range of applications, providing customers with seamless integration and exceptional performance. Elevate your projects with the value, benefits, and advantages that only Micron can offer. Choose Micron for top-of-the-line memory solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY is a durable and lightweight material, ensuring the product is robust and easy to handle.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on circuit boards.

Power Supplies (V): 1.8/3.3,3/3.3

Supports multiple power supply options, allowing for flexibility in different circuit configurations.

Package Shape: SQUARE

Square package shape helps in efficient use of PCB space and allows for easy alignment during assembly.

No. of Terminals: 153

High number of terminals provide connectivity options for complex circuit designs.

Package Style (Meter): GRID ARRAY, FINE PITCH

Grid array and fine pitch package style enables high-density packaging for increased memory density.

Maximum Operating Temperature: 85 °C

Operating at a high temperature range ensures product reliability in various environmental conditions.

Minimum Operating Temperature: -25 °C

Withstanding low temperatures ensures product functionality in cold environments.

Terminal Position: BOTTOM

Bottom terminal position simplifies the mounting process and improves PCB layout.

Terminal Form: BALL

Ball terminal form provides secure connections and allows for high-speed data transfer.

Terminal Pitch: 0.5 mm

Small terminal pitch enables high-density integration and precise connections on the PCB.

Memory Density: 137438953472 bit

High memory density allows for storage of large amounts of data in a compact form factor.

Technical Specifications

Other Function Memory ICs MTFC16GLTAM-WT attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

JESD-30 Code:

S-PBGA-B153

Memory Density:

137438953472 bit

No. of Terminals:

153

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Power Supplies (V):

1.8/3.3,3/3.3

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Trade Compliance

MTFC16GLTAM-WT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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