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SN54HC670FK

Texas Instruments

SN54HC670FK by Texas Instruments

SN54HC670FK by Texas Instruments is a CMOS memory IC with 20 terminals in a square chip carrier package. Operating temperature ranges from -55°C to 125°C, suitable for military-grade applications. It has power supplies of 2-6V and is surface mountable, making it ideal for compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,445 parts In-Stock

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8,445

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Digiode

USA . 1,734 parts In-Stock

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1,734

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 759 parts In-Stock

1+ parts

$4.717

100+ parts

-

1k+ parts

$5.211

10k+ parts

-

759

$4.717

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$5.211

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DigiPath Technology Company

USA . 131 parts In-Stock

1+ parts

$5.194

100+ parts

$4.778

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-

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131

$5.194

$4.778

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ChromeModa Solutions

Germany . 5,289 parts In-Stock

1+ parts

$5.300

100+ parts

$4.346

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5,289

$5.300

$4.346

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IDEA Electronic Components Group

UK . 874 parts In-Stock

1+ parts

$5.300

100+ parts

-

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$4.770

10k+ parts

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874

$5.300

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$4.770

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AZTECH Wire

Italy . 815 parts In-Stock

1+ parts

$15.798

100+ parts

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815

$15.798

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One Stop Electronics

USA . 367 parts In-Stock

1+ parts

$22.000

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367

$22.000

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Corphita

USA . 1,523 parts In-Stock

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1,523

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Overview

Upgrade your memory storage with the SN54HC670FK by Texas Instruments, a top-quality manufacturer known for reliable and durable products. This versatile memory IC is perfect for a wide range of applications in various industries. With its ceramic package body material, square shape, and military-grade temperature grade, this chip carrier offers unmatched performance and longevity. Trust Texas Instruments to deliver cutting-edge technology and innovation, providing customers with exceptional value and benefits that will take their projects to the next level. Choose the SN54HC670FK for superior quality and reliability in your memory storage solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal conductivity and stability, making the product ideal for high temperature environments.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving time and reducing production costs.

Package Shape: SQUARE

Square packages offer uniformity in size and shape, facilitating easier board layout and design.

Power Supplies (V): 2/6

This product can operate within a wide range of power supply voltages, offering flexibility for different system requirements.

No. of Terminals: 20

Having a higher number of terminals allows for more connectivity options, enabling complex circuit designs and functionality.

Package Style (Meter): CHIP CARRIER

Chip carrier packages are compact and offer good protection for the integrated circuit, enhancing reliability and durability.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh temperature conditions, ensuring consistent performance under extreme environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the product to function reliably in cold environments, making it suitable for a variety of applications.

Terminal Position: QUAD

Quad terminal configuration enables better signal integrity and lower noise interference, improving overall performance and reliability.

Temperature Grade: MILITARY

Military-grade components undergo rigorous testing and have higher quality standards, ensuring long-term reliability and durability in demanding applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with different logic levels, making the product energy-efficient and versatile.

Terminal Form: NO LEAD

No-lead terminals provide better solder joint reliability and improve thermal performance, enhancing the overall quality and longevity of the product.

Terminal Pitch: 1.27 mm

With a fine terminal pitch, this product offers high density and compactness, allowing for miniaturization and space-saving in electronic designs.

Technical Specifications

Other Function Memory ICs SN54HC670FK attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N20

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

2/6

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

SN54HC670FK Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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