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SN54HC670FH

Texas Instruments

SN54HC670FH by Texas Instruments

SN54HC670FH by Texas Instruments is a CMOS memory IC with 20 terminals in a square chip carrier package. It operates b/w -55°C to 125°C, suitable for military-grade applications. With a power supply range of 2V to 6V, it is ideal for surface-mount designs requiring reliable non-leaded terminal connections.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,479 parts In-Stock

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3,479

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Vyrian

USA . 3,409 parts In-Stock

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3,409

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Distributors (Availability)

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Parana Technologies

USA . 949 parts In-Stock

1+ parts

$5.179

100+ parts

-

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$5.780

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949

$5.179

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$5.780

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DigiPath Technology Company

USA . 285 parts In-Stock

1+ parts

$5.703

100+ parts

$5.246

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285

$5.703

$5.246

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ChromeModa Solutions

Germany . 6,894 parts In-Stock

1+ parts

$5.819

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$4.772

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6,894

$5.819

$4.772

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IDEA Electronic Components Group

UK . 857 parts In-Stock

1+ parts

$5.819

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$5.237

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857

$5.819

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$5.237

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AZTECH Wire

Italy . 428 parts In-Stock

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$12.678

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428

$12.678

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One Stop Electronics

USA . 1,261 parts In-Stock

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$16.000

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1,261

$16.000

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Corphita

USA . 1,413 parts In-Stock

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1,413

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Overview

Unlock the power of advanced memory technology with the SN54HC670FH by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge solutions for a wide range of applications in the field of Other Function Memory ICs. With a focus on performance and innovation, this product offers unparalleled value to customers looking for top-tier memory solutions. Trust Texas Instruments to provide you with the tools you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material offers excellent thermal conductivity and stability, making it suitable for high temperature applications.

Surface Mount: YES

Surface mount technology provides efficient assembly and allows for more compact designs.

Package Shape: SQUARE

Square shape enables easier handling and precise placement on a circuit board.

Power Supplies (V): 2/6

Provides flexibility in power supply options, accommodating multiple voltage requirements.

No. of Terminals: 20

Having a higher number of terminals allows for increased connectivity and functionality of the memory IC.

Package Style (Meter): CHIP CARRIER

Chip carrier packages offer good thermal performance and protection for the integrated circuit.

Maximum Operating Temperature: 125 °C

Ability to operate at high temperatures ensures reliability and performance in demanding environments.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions without compromising performance.

Terminal Position: QUAD

Quad terminal position allows for efficient routing of signals and easy integration into a circuit design.

Temperature Grade: MILITARY

Military-grade components are designed to withstand harsh conditions and ensure long-term durability and reliability.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall performance efficiency.

Terminal Form: NO LEAD

No lead terminals provide improved signal integrity and reliability in a lead-free environment.

Terminal Pitch: 1.27 mm

Fine terminal pitch allows for dense packing of components on a circuit board, saving space and enabling high-speed data transfer.

Technical Specifications

Other Function Memory ICs SN54HC670FH attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N20

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

2/6

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

SN54HC670FH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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