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SN54AS870FH

Texas Instruments

SN54AS870FH by Texas Instruments

SN54AS870FH by Texas Instruments is a TTL technology memory IC with 28 terminals in a square chip carrier package. Operating temperature ranges from -55°C to 125°C, making it suitable for military-grade applications. This surface-mount IC is ideal for various functions requiring reliable memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,606 parts In-Stock

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3,606

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Vyrian

USA . 3,219 parts In-Stock

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3,219

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 303 parts In-Stock

1+ parts

$2.626

100+ parts

$243.900

1k+ parts

$2.364

10k+ parts

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303

$2.626

$243.900

$2.364

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DigiPath Technology Company

USA . 1,493 parts In-Stock

1+ parts

$2.892

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1,493

$2.892

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IDEA Electronic Components Group

UK . 1,662 parts In-Stock

1+ parts

$2.951

100+ parts

-

1k+ parts

$2.656

10k+ parts

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1,662

$2.951

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$2.656

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ChromeModa Solutions

Germany . 1,657 parts In-Stock

1+ parts

$2.951

100+ parts

$2.420

1k+ parts

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1,657

$2.951

$2.420

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AZTECH Wire

Italy . 693 parts In-Stock

1+ parts

$5.529

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693

$5.529

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One Stop Electronics

USA . 825 parts In-Stock

1+ parts

$19.000

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825

$19.000

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Corphita

USA . 3,628 parts In-Stock

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3,628

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Overview

Discover the unparalleled reliability and performance of the SN54AS870FH by Texas Instruments, a top-of-the-line Other Function Memory IC. Designed with precision and expertise, this chip carrier package offers temperature grades suitable for military applications, making it ideal for a wide range of industries. Unleash the power of cutting-edge technology with Texas Instruments and experience seamless functionality, durability, and unmatched value like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides high thermal conductivity, ensuring efficient heat dissipation during operation.

Surface Mount: YES

Surface mount technology allows for easy and secure installation on circuit boards, saving time and effort during assembly.

Package Shape: SQUARE

Square package shape enables efficient use of board space and facilitates uniform heat distribution.

No. of Terminals: 28

The high number of terminals allows for the connection of multiple pins, enhancing the functionality and versatility of the memory IC.

Package Style (Meter): CHIP CARRIER

Chip carrier package style provides protection to the memory IC and facilitates easy handling and integration into electronic devices.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability and stability of the memory IC in various operating conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the memory IC to function optimally even in extreme cold environments.

Terminal Position: QUAD

Quad terminal position enables efficient and secure connections, reducing the risk of signal interference or loss.

Temperature Grade: MILITARY

Military-grade temperature grade ensures durability and performance of the memory IC under harsh environmental conditions.

Technology: TTL

TTL technology provides fast and reliable signal processing, making the memory IC suitable for high-speed applications.

Terminal Form: NO LEAD

No-lead terminal form eliminates the risk of lead contamination and ensures environmental safety.

Terminal Pitch: 1.27 mm

Fine terminal pitch of 1.27mm allows for compact design and high-density mounting of the memory IC on circuit boards.

Technical Specifications

Other Function Memory ICs SN54AS870FH attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N28

No. of Terminals:

28

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC28,.45SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

SN54AS870FH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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