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N36RW02DTPT3G

Onsemi

N36RW02DTPT3G by Onsemi

N36RW02DTPT3G by Onsemi is a Memory Circuit IC with 2048-bit memory density, 64x32 organization, and operates b/w -40 to 105 °C. It is used in industrial applications requiring small outline package style and dual terminal position for compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,444 parts In-Stock

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1,444

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Vyrian

USA . 820 parts In-Stock

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820

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 8,286 parts In-Stock

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8,286

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Kulean Microsystems

USA . 4,020 parts In-Stock

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4,020

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TANS Electronics

Latvia . 2,824 parts In-Stock

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2,824

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SupplyDigital Components

Austria . 2,521 parts In-Stock

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2,521

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Corphita

USA . 2,043 parts In-Stock

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2,043

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UHIMA Technologies

Türkiye . 395 parts In-Stock

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395

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Corohmni

South Africa . 378 parts In-Stock

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378

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Overview

Enhance your products with the N36RW02DTPT3G by Onsemi, a top-quality Memory Circuit IC that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this IC is ideal for a wide range of applications. With a compact design and high durability, this Memory IC provides exceptional value to customers looking to elevate their products. Trust Onsemi to deliver cutting-edge technology that exceeds expectations. Elevate your products with the N36RW02DTPT3G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is lightweight and durable, making the product easy to handle and long-lasting.

Surface Mount: YES

Surface mounting allows for easy installation on circuit boards, saving time and effort during assembly.

Maximum Operating Temperature: 105 °C

With a high operating temperature range, this product can withstand heat in industrial environments.

Memory Density: 2048 bit

High memory density allows for storing a significant amount of data in a small space, making the product efficient and space-saving.

Terminal Pitch: 1.27 mm

A small terminal pitch enables the product to have a compact design and facilitates integration into compact electronic devices.

Technical Specifications

Other Function Memory ICs N36RW02DTPT3G attributes and parameters. Explore more Other Function Memory ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X32

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

N36RW02DTPT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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