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N36RW02DWPT3G

Onsemi

N36RW02DWPT3G by Onsemi

N36RW02DWPT3G by Onsemi is a memory circuit IC with 2048-bit density and 64x32 organization. It operates b/w -40 °C to 105°C, suitable for industrial applications. With a small outline package style, Gull Wing terminal form, and dual position terminals, it's ideal for compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,988 parts In-Stock

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Vyrian

USA . 1,191 parts In-Stock

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1,191

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Kulean Microsystems

USA . 7,105 parts In-Stock

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7,105

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SupplyDigital Components

Austria . 6,426 parts In-Stock

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TANS Electronics

Latvia . 2,461 parts In-Stock

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Problanco Electronics

Mexico . 995 parts In-Stock

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995

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UHIMA Technologies

Türkiye . 601 parts In-Stock

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601

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Corphita

USA . 567 parts In-Stock

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Corohmni

South Africa . 390 parts In-Stock

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Overview

Discover the N36RW02DWPT3G by Onsemi, a top-quality memory circuit that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. With its compact design and advanced features, the N36RW02DWPT3G provides exceptional value and benefits to customers looking for a high-quality memory IC. Upgrade your electronic devices with this innovative solution and experience the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape is a standard design that is easy to handle and integrate into various devices.

No. of Terminals: 8

Having 8 terminals provides sufficient connectivity options for the memory IC.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature ensures reliable performance even in challenging environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the memory IC to function in a wide range of temperatures.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish offers excellent conductivity and durability.

Terminal Position: DUAL

Having dual terminal positions offers flexibility in installation and connection options.

Width: 3.9 mm

The compact width makes the memory IC suitable for space-constrained applications.

Minimum Supply Voltage (Vsup): 1.8 V

The low minimum supply voltage helps in reducing power consumption.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures the memory IC can withstand harsh operating conditions in industrial settings.

Memory Width: 32

The memory width of 32 bits provides ample storage capacity for data processing.

No. of Words: 64 words

Having 64 words allows for storing a decent amount of data for various applications.

Memory Density: 2048 bit

The high memory density of 2048 bits enables efficient data storage and retrieval.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit, this product is essential for storing and managing data in electronic devices.

Technical Specifications

Other Function Memory ICs N36RW02DWPT3G attributes and parameters. Explore more Other Function Memory ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X32

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

N36RW02DWPT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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