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SNC54170J

Texas Instruments

SNC54170J by Texas Instruments

SNC54170J by Texas Instruments is a MIL-STD-883 Class B (Modified) rated TTL memory IC with 16 terminals and a supply voltage of 5V. It operates in temperatures ranging from -55°C to 125°C, making it suitable for military-grade applications requiring reliable performance in harsh environments. The ceramic package body material ensures durability and robustness for long-term use.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,229 parts In-Stock

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Digiode

USA . 1,352 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 736 parts In-Stock

1+ parts

$3.348

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$3.873

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736

$3.348

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$3.873

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DigiPath Technology Company

USA . 865 parts In-Stock

1+ parts

$3.687

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865

$3.687

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ChromeModa Solutions

Germany . 5,249 parts In-Stock

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$3.762

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$3.085

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5,249

$3.762

$3.085

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IDEA Electronic Components Group

UK . 868 parts In-Stock

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$3.762

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$3.386

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868

$3.762

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$3.386

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One Stop Electronics

USA . 596 parts In-Stock

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$7.000

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596

$7.000

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AZTECH Wire

Italy . 706 parts In-Stock

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$16.667

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706

$16.667

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Corphita

USA . 1,159 parts In-Stock

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Overview

Elevate your projects with the SNC54170J by Texas Instruments, a high-quality Other Function Memory IC that delivers unmatched performance and reliability. With Texas Instruments' reputation for excellence in semiconductor manufacturing, this product offers exceptional value and benefits to customers. Ideal for military-grade applications, this IC boasts a wide operating temperature range and advanced technology, making it a versatile solution for demanding environments. Upgrade your designs with the SNC54170J and experience superior functionality and durability like never before.

Feature Benefit Bullets

Package Body Material : CERAMIC

Ceramic packaging provides excellent thermal conductivity and durability, making it a reliable option for demanding military applications.

Screening Level : MIL-STD-883 Class B (Modified)

Compliance with MIL-STD-883 Class B ensures high reliability and quality standards, important for military-grade applications.

Nominal Supply Voltage / Vsup (V) : 5

Operating at a standard 5V supply voltage makes it compatible with common power sources, simplifying integration into existing systems.

Maximum Operating Temperature : 125 °C

With a high maximum operating temperature of 125°C, this memory IC can withstand harsh environmental conditions and extended operation.

Minimum Operating Temperature : -55 °C

The wide temperature range of -55°C to 125°C allows this memory IC to function reliably in a variety of extreme environments.

Technology : TTL

Using TTL technology ensures compatibility with existing TTL-based systems, enhancing the versatility of this memory IC.

Technical Specifications

Other Function Memory ICs SNC54170J attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T16

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

Other Memory ICs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNC54170J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-006-7954, 5962010067954

NIIN

010067954

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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