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MTFC2GMTEA-WT

Micron Technology

MTFC2GMTEA-WT by Micron Technology

MTFC2GMTEA-WT by Micron Technology is a 153-terminal memory IC with 17179869184 bit density. It operates b/w -25°C to 85°C, supporting power supplies of 1.8/3.3V and 3/3.3V. This square-shaped, surface-mountable IC in plastic/epoxy package is ideal for various applications requiring high memory capacity and temperature resilience.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 10,400 parts In-Stock

1+ parts

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10,400

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Vyrian

USA . 7,339 parts In-Stock

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7,339

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Digiode

USA . 1,740 parts In-Stock

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1,740

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 3,805 parts In-Stock

1+ parts

$10.235

100+ parts

-

1k+ parts

$9.826

10k+ parts

$9.826

3,805

$10.235

-

$9.826

$9.826

AZTECH Wire

Italy . 454 parts In-Stock

1+ parts

$11.850

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454

$11.850

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Ampacity Inc.

Singapore . 999 parts In-Stock

1+ parts

$30.000

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999

$30.000

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Corphita

USA . 1,856 parts In-Stock

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1,856

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Microchip USA

USA . 471 parts In-Stock

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471

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Overview

Experience the unmatched quality and reliability of Micron Technology with the MTFC2GMTEA-WT memory IC. This innovative product is designed to elevate your applications to new heights, offering seamless integration and exceptional performance. Whether you're in need of high-speed data storage or efficient processing capabilities, this memory IC delivers unrivaled value and benefits. Trust Micron Technology to provide top-notch solutions that meet your needs and exceed your expectations. Elevate your projects with the MTFC2GMTEA-WT today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the IC, making it suitable for various environmental conditions.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Power Supplies (V): 1.8/3.3,3/3.3

Support for multiple voltage options allows for compatibility with different system requirements, increasing flexibility in application design.

No. of Terminals: 153

Having a high number of terminals facilitates complex connections and functionalities, making the IC versatile for various applications.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array and fine pitch package style contribute to high signal integrity and reliability, essential for memory ICs to maintain data integrity.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can function reliably even under demanding conditions, ensuring long-term performance.

Minimum Operating Temperature: -25 °C

The IC can operate in low-temperature environments without performance degradation, making it suitable for a wide range of operating conditions.

Terminal Position: BOTTOM

Bottom terminal position enhances thermal management and signal integrity, crucial for efficient operation and data transmission.

Terminal Form: BALL

Ball terminals offer efficient electrical connections with reduced risk of solder joint failure, optimizing signal transmission and reliability.

Memory Density: 17179869184 bit

High memory density enables storage of large amounts of data in a compact form, ideal for applications requiring extensive memory capacity and fast data access.

Technical Specifications

Other Function Memory ICs MTFC2GMTEA-WT attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

JESD-30 Code:

S-PBGA-B153

Memory Density:

17179869184 bit

No. of Terminals:

153

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Power Supplies (V):

1.8/3.3,3/3.3

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Trade Compliance

MTFC2GMTEA-WT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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